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Title: Studies of Basic Electronic Properties of CdTe-Based Solar Cells and Their Evolution During Processing and Stress: Final Technical Report, 16 October 2001 - 31 August 2005

Abstract

This report describes basic issues behind CdTe/CdS cell performance and stability, such as the nature and electronic properties of impurities and defects that control the majority carrier concentration, mechanisms of dopant compensation, recombination processes, their nature and properties, migration and transformation of defects under various processing, stress, and operating conditions. We believe that a better basic understanding of the specific influence of grain boundaries, especially for fine-grain materials such as those making up CdTe-based cells, is now one of the most important issues we must address. We need to clarify the role of grain boundaries in forming the film electronic properties, as well as those of the p-n junction.

Authors:
;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
899988
Report Number(s):
NREL/SR-520-41129
ADJ-2-30630-05; TRN: US200709%%518
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Technical Report
Resource Relation:
Related Information: Work performed by Colorado School of Mines, Golden, Colorado
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; DEFECTS; GRAIN BOUNDARIES; IMPURITIES; PERFORMANCE; P-N JUNCTIONS; PROCESSING; RECOMBINATION; SOLAR CELLS; STABILITY; TRANSFORMATIONS; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; CHARGE INJECTION SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; ELECTRODEPOSITION; ADMITTANCE SPECTROSCOPY; CAPACITANCE TRANSIENTS; DEEP ELECTRONIC STATES; CHEMICAL-BATH DEPOSITION; POST-DEPOSITION ANNEALING; GAS-TRANSPORT DEPOSITION; GAS-JET SYSTEM; OPTIMIZATION; Solar Energy - Photovoltaics

Citation Formats

Kaydanov, V. I., and Ohno, T. R. Studies of Basic Electronic Properties of CdTe-Based Solar Cells and Their Evolution During Processing and Stress: Final Technical Report, 16 October 2001 - 31 August 2005. United States: N. p., 2007. Web. doi:10.2172/899988.
Kaydanov, V. I., & Ohno, T. R. Studies of Basic Electronic Properties of CdTe-Based Solar Cells and Their Evolution During Processing and Stress: Final Technical Report, 16 October 2001 - 31 August 2005. United States. doi:10.2172/899988.
Kaydanov, V. I., and Ohno, T. R. Thu . "Studies of Basic Electronic Properties of CdTe-Based Solar Cells and Their Evolution During Processing and Stress: Final Technical Report, 16 October 2001 - 31 August 2005". United States. doi:10.2172/899988. https://www.osti.gov/servlets/purl/899988.
@article{osti_899988,
title = {Studies of Basic Electronic Properties of CdTe-Based Solar Cells and Their Evolution During Processing and Stress: Final Technical Report, 16 October 2001 - 31 August 2005},
author = {Kaydanov, V. I. and Ohno, T. R.},
abstractNote = {This report describes basic issues behind CdTe/CdS cell performance and stability, such as the nature and electronic properties of impurities and defects that control the majority carrier concentration, mechanisms of dopant compensation, recombination processes, their nature and properties, migration and transformation of defects under various processing, stress, and operating conditions. We believe that a better basic understanding of the specific influence of grain boundaries, especially for fine-grain materials such as those making up CdTe-based cells, is now one of the most important issues we must address. We need to clarify the role of grain boundaries in forming the film electronic properties, as well as those of the p-n junction.},
doi = {10.2172/899988},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Feb 01 00:00:00 EST 2007},
month = {Thu Feb 01 00:00:00 EST 2007}
}

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