Noncontact surface thermometry for microsystems: LDRD final report.
- Georgia Institute of Technology, Atlanta, GA
- Georgia Institute of Technology, Atlanta, GA
- Georgia Institute of Technology, Atlanta, GA
We describe a Laboratory Directed Research and Development (LDRD) effort to develop and apply laser-based thermometry diagnostics for obtaining spatially resolved temperature maps on working microelectromechanical systems (MEMS). The goal of the effort was to cultivate diagnostic approaches that could adequately resolve the extremely fine MEMS device features, required no modifications to MEMS device design, and which did not perturb the delicate operation of these extremely small devices. Two optical diagnostics were used in this study: microscale Raman spectroscopy and microscale thermoreflectance. Both methods use a low-energy, nonperturbing probe laser beam, whose arbitrary wavelength can be selected for a diffraction-limited focus that meets the need for micron-scale spatial resolution. Raman is exploited most frequently, as this technique provides a simple and unambiguous measure of the absolute device temperature for most any MEMS semiconductor or insulator material under steady state operation. Temperatures are obtained from the spectral position and width of readily isolated peaks in the measured Raman spectra with a maximum uncertainty near {+-}10 K and a spatial resolution of about 1 micron. Application of the Raman technique is demonstrated for V-shaped and flexure-style polycrystalline silicon electrothermal actuators, and for a GaN high-electron-mobility transistor. The potential of the Raman technique for simultaneous measurement of temperature and in-plane stress in silicon MEMS is also demonstrated and future Raman-variant diagnostics for ultra spatio-temporal resolution probing are discussed. Microscale thermoreflectance has been developed as a complement for the primary Raman diagnostic. Thermoreflectance exploits the small-but-measurable temperature dependence of surface optical reflectivity for diagnostic purposes. The temperature-dependent reflectance behavior of bulk silicon, SUMMiT-V polycrystalline silicon films and metal surfaces is presented. The results for bulk silicon are applied to silicon-on-insulator (SOI) fabricated actuators, where measured temperatures with a maximum uncertainty near {+-}9 K, and 0.75-micron inplane spatial resolution, are achieved for the reflectance-based measurements. Reflectance-based temperatures are found to be in good agreement with Raman-measured temperatures from the same device.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 899367
- Report Number(s):
- SAND2006-6369; TRN: US200709%%85
- Country of Publication:
- United States
- Language:
- English
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