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Title: Actinic Inspection of EUV Programmed Multilayer Defects and Cross-Comparison Measurements

Abstract

The production of defect-free mask blanks remains a key challenge for extreme ultraviolet (EUV) lithography. Integral to this effort is the development and characterization of mask inspection tools that are sensitive enough to detect critical defects with high confidence. Using a single programmed-defect mask with a range of buried bump-type defects, we report a comparison of measurements made in four different mask-inspection tools: one commercial tool using 488-nm wavelength illumination, one prototype tool that uses 266-nm illumination, and two non-commercial EUV ''actinic'' inspection tools. The EUV tools include a darkfield imaging microscope and a scanning microscope. Our measurements show improving sensitivity with the shorter wavelength non-EUV tool, down to 33-nm spherical-equivalent-volume diameter, for defects of this type. Measurements conditions were unique to each tool, with the EUV tools operating at a much slower inspection rate. Several defects observed with EUV inspection were below the detection threshold of the non-EUV tools.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
898495
Report Number(s):
UCRL-PROC-222614
TRN: US200706%%96
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Conference
Resource Relation:
Conference: Presented at: Electron Ion and Photon beams and nanofabrication, Baltimore, MD, United States, May 30 - Jun 02, 2006
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DEFECTS; DETECTION; ELECTRONS; ILLUMINANCE; MICROSCOPES; PHOTON BEAMS; PRODUCTION; SENSITIVITY; WAVELENGTHS

Citation Formats

Goldberg, K, Barty, A, Liu, Y, Kearney, P, Tezuka, Y, Terasawa, T, Taylor, J S, Han, H, and Wood, O. Actinic Inspection of EUV Programmed Multilayer Defects and Cross-Comparison Measurements. United States: N. p., 2006. Web.
Goldberg, K, Barty, A, Liu, Y, Kearney, P, Tezuka, Y, Terasawa, T, Taylor, J S, Han, H, & Wood, O. Actinic Inspection of EUV Programmed Multilayer Defects and Cross-Comparison Measurements. United States.
Goldberg, K, Barty, A, Liu, Y, Kearney, P, Tezuka, Y, Terasawa, T, Taylor, J S, Han, H, and Wood, O. Mon . "Actinic Inspection of EUV Programmed Multilayer Defects and Cross-Comparison Measurements". United States. https://www.osti.gov/servlets/purl/898495.
@article{osti_898495,
title = {Actinic Inspection of EUV Programmed Multilayer Defects and Cross-Comparison Measurements},
author = {Goldberg, K and Barty, A and Liu, Y and Kearney, P and Tezuka, Y and Terasawa, T and Taylor, J S and Han, H and Wood, O},
abstractNote = {The production of defect-free mask blanks remains a key challenge for extreme ultraviolet (EUV) lithography. Integral to this effort is the development and characterization of mask inspection tools that are sensitive enough to detect critical defects with high confidence. Using a single programmed-defect mask with a range of buried bump-type defects, we report a comparison of measurements made in four different mask-inspection tools: one commercial tool using 488-nm wavelength illumination, one prototype tool that uses 266-nm illumination, and two non-commercial EUV ''actinic'' inspection tools. The EUV tools include a darkfield imaging microscope and a scanning microscope. Our measurements show improving sensitivity with the shorter wavelength non-EUV tool, down to 33-nm spherical-equivalent-volume diameter, for defects of this type. Measurements conditions were unique to each tool, with the EUV tools operating at a much slower inspection rate. Several defects observed with EUV inspection were below the detection threshold of the non-EUV tools.},
doi = {},
url = {https://www.osti.gov/biblio/898495}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2006},
month = {6}
}

Conference:
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