skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Unselective Regrowth Buried Heterostructure Long-Wavelength Superluminescent Diode Realized With MOVPE

Abstract

No abstract prepared.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Stanford Linear Accelerator Center (SLAC)
Sponsoring Org.:
USDOE
OSTI Identifier:
897736
Report Number(s):
SLAC-REPRINT-2007-003
TRN: US200705%%231
DOE Contract Number:
AC02-76SF00515
Resource Type:
Journal Article
Resource Relation:
Journal Name: J.Lumin.122:176,2007
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SEMICONDUCTOR DIODES; FABRICATION; VAPOR PHASE EPITAXY; LUMINESCENCE; Other,OTHER

Citation Formats

Ding, Ying, Zhou, Fan, Chen, Wei-xi, Wang, Wei, and /SLAC, SSRL. Unselective Regrowth Buried Heterostructure Long-Wavelength Superluminescent Diode Realized With MOVPE. United States: N. p., 2007. Web. doi:10.1016/j.jlumin.2006.01.077.
Ding, Ying, Zhou, Fan, Chen, Wei-xi, Wang, Wei, & /SLAC, SSRL. Unselective Regrowth Buried Heterostructure Long-Wavelength Superluminescent Diode Realized With MOVPE. United States. doi:10.1016/j.jlumin.2006.01.077.
Ding, Ying, Zhou, Fan, Chen, Wei-xi, Wang, Wei, and /SLAC, SSRL. Tue . "Unselective Regrowth Buried Heterostructure Long-Wavelength Superluminescent Diode Realized With MOVPE". United States. doi:10.1016/j.jlumin.2006.01.077.
@article{osti_897736,
title = {Unselective Regrowth Buried Heterostructure Long-Wavelength Superluminescent Diode Realized With MOVPE},
author = {Ding, Ying and Zhou, Fan and Chen, Wei-xi and Wang, Wei and /SLAC, SSRL},
abstractNote = {No abstract prepared.},
doi = {10.1016/j.jlumin.2006.01.077},
journal = {J.Lumin.122:176,2007},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 16 00:00:00 EST 2007},
month = {Tue Jan 16 00:00:00 EST 2007}
}
  • A superluminescent diode (SLD) based on a proven high power, high efficiency ''window-'' type index-guided buried heterostructure laser is demonstrated. Lasing is suppressed for SLD operation by antireflection coating and by incorporating an unpumped absorber section. The resulting device emits high optical power (14 mW) in the SLD mode at very low injection current (50 mA). The spectral modulation depth is below 14% over the entire emission spectral bandwidth of 20 nm, with a symmetrical beam divergence (20/sup 0/ x 40/sup 0/) and a stable transverse mode.
  • Threshold current of 2 mA at room temperature cw operation is realized in a vertical distributed feedback surface-emitting laser diode with lateral buried heterostructure (LBH). In this LBH structure, the vertical distributed feedback active region (AlGaAs/GaAs multilayer) is entirely surrounded with n- and p-type AlGaAs cladding layers for minority-carrier confinement. The far-field angle is 7/sup 0/. The beam shape is nearly circular. However, the lasing spectrum is broad (2--3 nm) compared with the conventional edge-emitting laser. Major differences between the surface-emitting laser diode presented here and the conventional edge-emitting laser diode are discussed.
  • The quality of )111) sidewall interfaces formed during liquid phase epitaxial regrowth around an etched mesa in an etched-mesa-buried-heterostructure laser device has been studied using cross-sectional transmission electron microscopy, cross-sectional transmission cathodoluminescence, and energy dispersive x-ray analysis. The results are correlated with the optical performance and electrical characteristics of the device before the aging test. It is found that the interfacial lattice imperfection will affect the device performance only when the defects are nonradiative recombination centers or they constitute a leakage path for the current. The possible causes for a defective interface will be discussed.
  • Aging tests of InGaAsP/InP V-grooved substrate buried heterostructure lasers have performed. The cw threshold current of these lasers is around 20 mA at 25 /sup 0/C. The laser are tested at 10, 50, and 70 /sup 0/C with a constant optical power of 5 mW/facet and are still operating at over 5000 h with only a slight increase in the driving current. The far-field pattern and lasing spectrum do not change appreciably during aging, and self-pulsation is not observed after aging.
  • A photoluminescence technique to characterize, for lasing wavelength, the channeled substrate buried heterostructure wafer grown for fabricating lasers for undersea transmission applications, is described. The technique consists of photopumping a piece from the as-grown wafer at 80 K to achieve lasing action and determining the lasing wavelength at 300 K after correcting for the temperature shift of the bandgap. By comparing the optically determined wavelength against the lasing wavelength measured on the device, the accuracy of the technique to predict wavelength is found to be +- 20 nm. The factors that limit the accuracy are discussed.