skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Unselective Regrowth Buried Heterostructure Long-Wavelength Superluminescent Diode Realized With MOVPE

Abstract

No abstract prepared.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Stanford Linear Accelerator Center (SLAC)
Sponsoring Org.:
USDOE
OSTI Identifier:
897736
Report Number(s):
SLAC-REPRINT-2007-003
TRN: US200705%%231
DOE Contract Number:
AC02-76SF00515
Resource Type:
Journal Article
Resource Relation:
Journal Name: J.Lumin.122:176,2007
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SEMICONDUCTOR DIODES; FABRICATION; VAPOR PHASE EPITAXY; LUMINESCENCE; Other,OTHER

Citation Formats

Ding, Ying, Zhou, Fan, Chen, Wei-xi, Wang, Wei, and /SLAC, SSRL. Unselective Regrowth Buried Heterostructure Long-Wavelength Superluminescent Diode Realized With MOVPE. United States: N. p., 2007. Web. doi:10.1016/j.jlumin.2006.01.077.
Ding, Ying, Zhou, Fan, Chen, Wei-xi, Wang, Wei, & /SLAC, SSRL. Unselective Regrowth Buried Heterostructure Long-Wavelength Superluminescent Diode Realized With MOVPE. United States. doi:10.1016/j.jlumin.2006.01.077.
Ding, Ying, Zhou, Fan, Chen, Wei-xi, Wang, Wei, and /SLAC, SSRL. Tue . "Unselective Regrowth Buried Heterostructure Long-Wavelength Superluminescent Diode Realized With MOVPE". United States. doi:10.1016/j.jlumin.2006.01.077.
@article{osti_897736,
title = {Unselective Regrowth Buried Heterostructure Long-Wavelength Superluminescent Diode Realized With MOVPE},
author = {Ding, Ying and Zhou, Fan and Chen, Wei-xi and Wang, Wei and /SLAC, SSRL},
abstractNote = {No abstract prepared.},
doi = {10.1016/j.jlumin.2006.01.077},
journal = {J.Lumin.122:176,2007},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 16 00:00:00 EST 2007},
month = {Tue Jan 16 00:00:00 EST 2007}
}