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Title: Enhanced and retarded Ga self-diffusion in Si and Be doped GaAsisotope heterostructures

Authors:
; ; ; ;
Publication Date:
Research Org.:
Ernest Orlando Lawrence Berkeley NationalLaboratory, Berkeley, CA (US)
Sponsoring Org.:
USDOE Director, Office of Science. Office of Basic EnergySciences. Division of Materials Sciences; National ScienceFoundation
OSTI Identifier:
894535
Report Number(s):
LBNL-44549
R&D Project: 513310
DOE Contract Number:  
DE-AC02-05CH11231; NSF:DMR-9732707
Resource Type:
Journal Article
Journal Name:
Solid State Communications
Additional Journal Information:
Journal Volume: 112; Journal Issue: 6; Related Information: Journal PublicationDate: 09/01/1999
Country of Publication:
United States
Language:
English
Subject:
36; Semiconductors Impurities in semiconductors Thermodynamicproperties

Citation Formats

Bracht, H., Norseng, M., Haller, E.E., Eberl, K., and Cardona, M. Enhanced and retarded Ga self-diffusion in Si and Be doped GaAsisotope heterostructures. United States: N. p., 1999. Web.
Bracht, H., Norseng, M., Haller, E.E., Eberl, K., & Cardona, M. Enhanced and retarded Ga self-diffusion in Si and Be doped GaAsisotope heterostructures. United States.
Bracht, H., Norseng, M., Haller, E.E., Eberl, K., and Cardona, M. Thu . "Enhanced and retarded Ga self-diffusion in Si and Be doped GaAsisotope heterostructures". United States.
@article{osti_894535,
title = {Enhanced and retarded Ga self-diffusion in Si and Be doped GaAsisotope heterostructures},
author = {Bracht, H. and Norseng, M. and Haller, E.E. and Eberl, K. and Cardona, M.},
abstractNote = {},
doi = {},
journal = {Solid State Communications},
number = 6,
volume = 112,
place = {United States},
year = {1999},
month = {8}
}