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Title: Monolithic, Ultra-Thin GaInP/GaAs/GaInAs Tandem Solar Cells

Abstract

No abstract prepared.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
894446
Report Number(s):
NREL/PR-520-39852
TRN: US200701%%459
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Conference: Prepared for the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), 7-12 May 2006, Waikoloa, Hawaii
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ENERGY CONVERSION; SOLAR CELLS; SOLAR ENERGY; SOLAR; PV; TANDEM CELL PROCESSING; NREL; Solar Energy - Photovoltaics

Citation Formats

Wanlass, M., Ahrenkiel, P., Albin, D., Carapella, J., Duda, A., Emery, K., Friedman, D., Geisz, J., Jones, K., Kibbler, A., Kiehl, J., Kurtz, S., McMahon W., Moriarty, T., Olson, J., Ptak, A., Romero, M., and Ward, S. Monolithic, Ultra-Thin GaInP/GaAs/GaInAs Tandem Solar Cells. United States: N. p., 2006. Web. doi:10.1109/WCPEC.2006.279559.
Wanlass, M., Ahrenkiel, P., Albin, D., Carapella, J., Duda, A., Emery, K., Friedman, D., Geisz, J., Jones, K., Kibbler, A., Kiehl, J., Kurtz, S., McMahon W., Moriarty, T., Olson, J., Ptak, A., Romero, M., & Ward, S. Monolithic, Ultra-Thin GaInP/GaAs/GaInAs Tandem Solar Cells. United States. doi:10.1109/WCPEC.2006.279559.
Wanlass, M., Ahrenkiel, P., Albin, D., Carapella, J., Duda, A., Emery, K., Friedman, D., Geisz, J., Jones, K., Kibbler, A., Kiehl, J., Kurtz, S., McMahon W., Moriarty, T., Olson, J., Ptak, A., Romero, M., and Ward, S. Mon . "Monolithic, Ultra-Thin GaInP/GaAs/GaInAs Tandem Solar Cells". United States. doi:10.1109/WCPEC.2006.279559. https://www.osti.gov/servlets/purl/894446.
@article{osti_894446,
title = {Monolithic, Ultra-Thin GaInP/GaAs/GaInAs Tandem Solar Cells},
author = {Wanlass, M. and Ahrenkiel, P. and Albin, D. and Carapella, J. and Duda, A. and Emery, K. and Friedman, D. and Geisz, J. and Jones, K. and Kibbler, A. and Kiehl, J. and Kurtz, S. and McMahon W. and Moriarty, T. and Olson, J. and Ptak, A. and Romero, M. and Ward, S.},
abstractNote = {No abstract prepared.},
doi = {10.1109/WCPEC.2006.279559},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon May 01 00:00:00 EDT 2006},
month = {Mon May 01 00:00:00 EDT 2006}
}

Conference:
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  • The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves invertedmore » epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.« less
  • We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removingmore » the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.« less
  • GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.
  • Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.
  • We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga0.5In0.5P/GaAs/Ga0.75In0.25As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga0.75In0.25As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap GaxIn1-xAs fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the GaxIn1-xAs fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eVmore » were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.« less