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Title: GaInAs 4th Junction for Next-Generation Lattice-Mismatched Multijunction Solar Cells (Presentation)

Abstract

No abstract prepared.

Authors:
; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
894439
Report Number(s):
NREL/PR-520-39909
TRN: US200701%%454
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Conference: Prepared for the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), 7-12 May 2006, Waikoloa, Hawaii
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ENERGY CONVERSION; SOLAR CELLS; SOLAR ENERGY; PHOTOVOLTAIC; PV; MULTIJUNCTION SOLAR CELL; INVERTED MULTIJUNCTION APPROACH; QUANTUM EFFICIENCY; NREL; Solar Energy - Photovoltaics

Citation Formats

Friedman, D. J., Geisz, J. F., Norman, A. G., Wanlass, M., and Kurtz, S. R. GaInAs 4th Junction for Next-Generation Lattice-Mismatched Multijunction Solar Cells (Presentation). United States: N. p., 2006. Web.
Friedman, D. J., Geisz, J. F., Norman, A. G., Wanlass, M., & Kurtz, S. R. GaInAs 4th Junction for Next-Generation Lattice-Mismatched Multijunction Solar Cells (Presentation). United States.
Friedman, D. J., Geisz, J. F., Norman, A. G., Wanlass, M., and Kurtz, S. R. Mon . "GaInAs 4th Junction for Next-Generation Lattice-Mismatched Multijunction Solar Cells (Presentation)". United States. doi:. https://www.osti.gov/servlets/purl/894439.
@article{osti_894439,
title = {GaInAs 4th Junction for Next-Generation Lattice-Mismatched Multijunction Solar Cells (Presentation)},
author = {Friedman, D. J. and Geisz, J. F. and Norman, A. G. and Wanlass, M. and Kurtz, S. R.},
abstractNote = {No abstract prepared.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon May 01 00:00:00 EDT 2006},
month = {Mon May 01 00:00:00 EDT 2006}
}

Conference:
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  • No abstract prepared.
  • Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunctionmore » solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.« less
  • High-quantum-efficiency, lattice-mismatched, 1.0-eV GaInAs solar cells grown by organometallic vapor phase epitaxy have been developed for ultimate integration into AlGaAs/GaAs/GaInAs 3-junction, 2-terminal monolithic devices. The more standard n/p junction was replaced with an n-i-p structure in the GaInAs cell in order to increase the short-circuit current by overcoming the material deficiencies which arise as a result of accommodating the lattice mismatch. This led to single junction 1.0-eV GaInAs cells with internal quantum efficiencies >90% and short-circuit-current densities that match or closely approach those needed to current match the upper AlGaAs and GaAs cells. A 4.1% (1-sun, air mass 0, 25[degrees]C)more » power conversion efficiency was achieved with a developmental structure, indicating the potential of the lattice-mismatched n-i-p 1.0-eV GaInAs cell. An analogous device designed to allow direct monolithic integration with the upper AlGaAs and GaAs cells, with a modified grading layer of AlGaInAs in place of the usual GaInAs, achieved an efficiency of 2.2%, primarily due to a lower open-circuit voltage. The open-circuit voltage is perhaps limited by structural defects revealed in transmission electron micrographs. 26 refs., 7 figs., 2 tabs.« less
  • Abstract not provided.