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Title: Profiling the Built-In Electrical Potential in III-V Multijunction Solar Cells (Poster)

Abstract

We have observed three electrical potentials at the top, tunneling, and bottom junctions of GnInP{sub 2}/GaAs tandem-junction solar cells, by performing the UHV-SKPM measurement. The effect of laser illumination was avoided by using GaAs laser with photon energy of 1.4 eV for the AFM operation. We also observed higher potentials at the atomic steps than on the terraces for both p-type GaInP{sub 2} epitaxial layer and p-type GaAs substrate, and found that the potential at steps of GaAs substrate depends on the step directions.

Authors:
; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
893117
Report Number(s):
NREL/PO-520-39864
TRN: US200625%%96
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Conference: Prepared for the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), 7-12 May 2006, Waikoloa, Hawaii
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ENERGY CONVERSION; ILLUMINANCE; LASERS; PHOTONS; SOLAR CELLS; SUBSTRATES; TUNNELING; SOLAR ENERGY; III-V MULTIJUNCTION; PHOTOVOLTAIC; MEASUREMENT; Solar Energy - Photovoltaics; Silicon Materials and Devices

Citation Formats

Jiang, C.-S., Friedman, D. J., Moutinho, H. R., and Al-Jassim, M. M.. Profiling the Built-In Electrical Potential in III-V Multijunction Solar Cells (Poster). United States: N. p., 2006. Web.
Jiang, C.-S., Friedman, D. J., Moutinho, H. R., & Al-Jassim, M. M.. Profiling the Built-In Electrical Potential in III-V Multijunction Solar Cells (Poster). United States.
Jiang, C.-S., Friedman, D. J., Moutinho, H. R., and Al-Jassim, M. M.. Mon . "Profiling the Built-In Electrical Potential in III-V Multijunction Solar Cells (Poster)". United States. doi:. https://www.osti.gov/servlets/purl/893117.
@article{osti_893117,
title = {Profiling the Built-In Electrical Potential in III-V Multijunction Solar Cells (Poster)},
author = {Jiang, C.-S. and Friedman, D. J. and Moutinho, H. R. and Al-Jassim, M. M.},
abstractNote = {We have observed three electrical potentials at the top, tunneling, and bottom junctions of GnInP{sub 2}/GaAs tandem-junction solar cells, by performing the UHV-SKPM measurement. The effect of laser illumination was avoided by using GaAs laser with photon energy of 1.4 eV for the AFM operation. We also observed higher potentials at the atomic steps than on the terraces for both p-type GaInP{sub 2} epitaxial layer and p-type GaAs substrate, and found that the potential at steps of GaAs substrate depends on the step directions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon May 01 00:00:00 EDT 2006},
month = {Mon May 01 00:00:00 EDT 2006}
}

Conference:
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