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Title: Profiling the Built-In Electrical Potential in III-V Multijunction Solar Cells (Poster)

Abstract

We have observed three electrical potentials at the top, tunneling, and bottom junctions of GnInP{sub 2}/GaAs tandem-junction solar cells, by performing the UHV-SKPM measurement. The effect of laser illumination was avoided by using GaAs laser with photon energy of 1.4 eV for the AFM operation. We also observed higher potentials at the atomic steps than on the terraces for both p-type GaInP{sub 2} epitaxial layer and p-type GaAs substrate, and found that the potential at steps of GaAs substrate depends on the step directions.

Authors:
; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
893117
Report Number(s):
NREL/PO-520-39864
TRN: US200625%%96
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Conference: Prepared for the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), 7-12 May 2006, Waikoloa, Hawaii
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ENERGY CONVERSION; ILLUMINANCE; LASERS; PHOTONS; SOLAR CELLS; SUBSTRATES; TUNNELING; SOLAR ENERGY; III-V MULTIJUNCTION; PHOTOVOLTAIC; MEASUREMENT; Solar Energy - Photovoltaics; Silicon Materials and Devices

Citation Formats

Jiang, C.-S., Friedman, D. J., Moutinho, H. R., and Al-Jassim, M. M. Profiling the Built-In Electrical Potential in III-V Multijunction Solar Cells (Poster). United States: N. p., 2006. Web.
Jiang, C.-S., Friedman, D. J., Moutinho, H. R., & Al-Jassim, M. M. Profiling the Built-In Electrical Potential in III-V Multijunction Solar Cells (Poster). United States.
Jiang, C.-S., Friedman, D. J., Moutinho, H. R., and Al-Jassim, M. M. Mon . "Profiling the Built-In Electrical Potential in III-V Multijunction Solar Cells (Poster)". United States. doi:. https://www.osti.gov/servlets/purl/893117.
@article{osti_893117,
title = {Profiling the Built-In Electrical Potential in III-V Multijunction Solar Cells (Poster)},
author = {Jiang, C.-S. and Friedman, D. J. and Moutinho, H. R. and Al-Jassim, M. M.},
abstractNote = {We have observed three electrical potentials at the top, tunneling, and bottom junctions of GnInP{sub 2}/GaAs tandem-junction solar cells, by performing the UHV-SKPM measurement. The effect of laser illumination was avoided by using GaAs laser with photon energy of 1.4 eV for the AFM operation. We also observed higher potentials at the atomic steps than on the terraces for both p-type GaInP{sub 2} epitaxial layer and p-type GaAs substrate, and found that the potential at steps of GaAs substrate depends on the step directions.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon May 01 00:00:00 EDT 2006},
month = {Mon May 01 00:00:00 EDT 2006}
}

Conference:
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  • We report on a direct measurement of the electrical potential on cross-sections of GaInP2/GaAs multiple-junction solar cells by using an ultrahigh-vacuum scanning Kelvin probe microscope (UHV-SKPM). The UHV-SKPM allows us to measure the potential without air molecules being adsorbed on the cross-sectional surface. Moreover, it uses a GaAs laser with photon energy of 1.4 eV for the atomic force microscope (AFM) operation. This eliminated the light-absorption-induced bottom-junction flattening and top-junction enhancement, which happened in our previous potential measurement using a 1.85-eV laser for the AFM operation. Three potentials were measured at the top, tunneling, and bottom junctions. Values of themore » potentials are smaller than the potentials in the bulk. This indicates that the Fermi level on the UHV-cleaved (110) surface was pinned, presumably due to defects upon cleaving. We also observed higher potentials at atomic steps than on the terraces for both GaInP2 epitaxial layer and GaAs substrate. Combining scanning tunneling microscopy (STM) and SKPM measurements, we found that the potential height at steps of the GaAs substrate depends on the step direction, which is probably a direct result of unbalanced cations and anions at the steps.« less
  • We report on a direct measurement of the electrical potential on cross-sections of GaInP{sub 2}/GaAs multiple-junction solar cells by using an ultrahigh-vacuum scanning Kelvin probe microscope (UHV-SKPM). The UHV-SKPM allows us to measure the potential without air molecules being adsorbed on the cross-sectional surface. Moreover, it uses a GaAs laser with photon energy of 1.4 eV for the atomic force microscope (AFM) operation. This eliminated the light-absorption-induced bottom-junction flattening and top-junction enhancement, which happened in our previous potential measurement using a 1.85-eV laser for the AFM operation. Three potentials were measured at the top, tunneling, and bottom junctions. Values ofmore » the potentials are smaller than the potentials in the bulk. This indicates that the Fermi level on the UHV-cleaved (110) surface was pinned, presumably due to defects upon cleaving. We also observed higher potentials at atomic steps than on the terraces for both GaInP2 epitaxial layer and GaAs substrate. Combining scanning tunneling microscopy (STM) and SKPM measurements, we found that the potential height at steps of the GaAs substrate depends on the step direction, which is probably a direct result of unbalanced cations and anions at the steps.« less
  • Solar cells fabricated from various III-V compounds have recently produced very high laboratory conversion efficiencies approaching 29% for single junction and 35% for multijunction structures under concentrated illumination. However, due to their relatively limited availability, few of these devices have been incorporated into actual concentrator module structures. Details are presented from two development efforts which have incorporated III-V cells into high efficiency prototype concentrator modules: (1) Varian's GaAs module operating at 1000 suns with flat fresnel lenses; and (2) Boeing's tandem GaAs/GaSb module operating at 50 suns with Entech's domed fresnel lenses.