Calcium Impurities in Enhanced-Depletion-Width GaInNAs Grown by Molecular-Beam Epitaxy

doi:10.1116/1.2190664

Title: Calcium Impurities in Enhanced-Depletion-Width GaInNAs Grown by Molecular-Beam Epitaxy

Full Record
Similar

Abstract

No abstract prepared.

Authors:: Ptak, A. J.; Friedman, D. J.; Kurtz, S.; Reedy, R. C.; Young, M.; Jackrel, D. B.; Yuen, H. B.; Bank, S. R.; Wistey, M. A.; Harris Jr., J. S.

Publication Date:: Mon May 01 00:00:00 EDT 2006

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 893073

DOE Contract Number:: AC36-99-GO10337

Resource Type:: Journal Article

Resource Relation:: Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces, and Films; Journal Issue: 3, May/June 2006

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CALCIUM; EPITAXY; IMPURITIES; Solar Energy - Photovoltaics

Citation Formats


                    Ptak, A. J., Friedman, D. J., Kurtz, S., Reedy, R. C., Young, M., Jackrel, D. B., Yuen, H. B., Bank, S. R., Wistey, M. A., and Harris Jr., J. S. Calcium Impurities in Enhanced-Depletion-Width GaInNAs Grown by Molecular-Beam Epitaxy.  United States: N. p., 2006. 
        Web.  doi:10.1116/1.2190664.

Copy to clipboard


                    Ptak, A. J., Friedman, D. J., Kurtz, S., Reedy, R. C., Young, M., Jackrel, D. B., Yuen, H. B., Bank, S. R., Wistey, M. A., & Harris Jr., J. S. Calcium Impurities in Enhanced-Depletion-Width GaInNAs Grown by Molecular-Beam Epitaxy.  United States.  doi:10.1116/1.2190664.

Copy to clipboard


                    Ptak, A. J., Friedman, D. J., Kurtz, S., Reedy, R. C., Young, M., Jackrel, D. B., Yuen, H. B., Bank, S. R., Wistey, M. A., and Harris Jr., J. S. Mon .  
        "Calcium Impurities in Enhanced-Depletion-Width GaInNAs Grown by Molecular-Beam Epitaxy".  United States.  
        doi:10.1116/1.2190664.

Copy to clipboard


                    
@article{osti_893073,

  title        = {Calcium Impurities in Enhanced-Depletion-Width GaInNAs Grown by Molecular-Beam Epitaxy},

  author       = {Ptak, A. J. and Friedman, D. J. and Kurtz, S. and Reedy, R. C. and Young, M. and Jackrel, D. B. and Yuen, H. B. and Bank, S. R. and Wistey, M. A. and Harris Jr., J. S.},

  abstractNote = {No abstract prepared.},

  doi          = {10.1116/1.2190664},

  journal      = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces, and Films},

  number       = 3, May/June 2006,

  volume       = ,

  place        = {United States},

  year         = {Mon May 01 00:00:00 EDT 2006},

  month        = {Mon May 01 00:00:00 EDT 2006}

}

Copy to clipboard

Journal Article:

DOI: 10.1116/1.2190664

Other availability

Find in Google Scholar

Search WorldCat to find libraries that may hold this journal

Save / Share:

Export Metadata

Save to My Library

Enhanced-Depletion-Width GaInNAs Solar Cells Grown by Molecular-Beam Epitaxy

Ptak, A. J. ; Friedman, D. J.

The 3-junction, GaInP2/GaAs/Ge solar cell is a non-optimized structure due to excess light falling on the Ge junction. Because of this, a fourth junction inserted between the GaAs and Ge subcells could use the excess light and provide an increase in device efficiency. Unfortunately, the leading candidate material, GaInNAs, suffers from very low minority-carrier diffusion lengths compared to its parent compound, GaAs. These low diffusion lengths do not allow for the collection of adequate current to keep the overall 4-junction structure current matched. If the currents generated from the GaInNAs subcell are increased, the possibility exists for practical efficiencies ofmore » greater than 40% from this structure.« less
DOI: 10.1109/PVSC.2005.1488203

Full Text Available
Enhanced-Depletion-Width GaInNAs Solar Cells Grown by Molecular-Beam Epitaxy

Ptak, A. J. ; Friedman, D. J. ; Kurtz, S. ; ...

GaInNAs, potentially useful in a 4-junction GaInP2/GaAs/GaInNAs/Ge solar cell, suffers from very low minority-carrier collection lengths. To date, the currents available from GaInNAs solar cells are not high enough to increase the efficiency of a 3-junction device by adding this fourth junction. Here, we grow p-i-n GaInNAs solar cells by molecular-beam epitaxy with wide, intrinsic base layers and internal quantum efficiencies near 1.0. If similar 1.0-eV GaInNAs junctions can be successfully integrated into the 3-junction structure, the resulting 4-junction cell would have a higher efficiency.
DOI: 10.1109/PVSC.2005.1488203

Full Text Available
Low-Acceptor-Concentration GaInNAs Grown by Molecular-Beam Epitaxy for High-Current p-i-n Solar Cell Applications

Ptak, A. J. ; Friedman, D. J. ; Kurtz, S. ; ... - Journal of Applied Physics
DOI: 10.1063/1.2113414
Improved Performance of GaInNAs Solar Cells Grown by Molecular-Beam Epitaxy Using Increased Growth Rate Instead of Surfactants

Ptak, A. J. ; France, R. ; Jiang, C. S. ; ... - Journal of Crystal Growth

GaInNAs is potentially useful for increasing the conversion efficiency of multijunction solar cells if low photocurrents and photovoltages can be increased. Wide-depletion width devices generate significant photocurrents using an n-i-p structure grown by molecular-beam epitaxy, but these wide depletion widths are only realized in a region of parameter space that leads to rough surface morphologies. Surfactants are effective at reducing the surface roughness, but lead to increased defect densities and changes in the net acceptor or donor concentration. Here, we show that increasing the growth rate of GaInNAs solar cells leads to smooth surfaces without the use of a surfactant,more »« less
DOI: 10.1016/j.jcrysgro.2008.09.184
Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy

Sun, Z.Z. ; Yoon, S.F. ; Yew, K.C. ; ... - Applied Physics Letters

We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by {approx}170 nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization of the GaAsN barrier layer thickness is necessary to avoid degradation in luminescence intensity and structural property of the GaInNAs dots. Lasers with GaInNAs quantum dots as active layer were fabricated and room-temperature continuous-wave lasing was observed. Lasing occurs via the ground state at {approx}1.2 {mu}m, with threshold current density of 2.1 kA/cm{sup 2} andmore » maximum output power of 16 mW.« less
DOI: 10.1063/1.1789236