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Title: Silicon Heterojunction Solar Cell Characterization and Optimization Using In Situ and Ex Situ Spectroscopic Ellipsometry: Preprint

Abstract

We use in-situ and ex-situ spectroscopic ellipsometry to characterize the optical, electronic, and structural properties of individual layers and completed silicon heterojunction devices. The combination of in-situ measurements during thin film deposition with ex-situ measurements of completed devices allows us to understand both the growth dynamics of the materials and the effects of each processing step on material properties. In-situ ellipsometry measurements enable us to map out how the optical properties change with deposition conditions, pointing the way towards reducing the absorption loss and increasing device efficiency. We use the measured optical properties and thickness of the i-, n-, and p-layers in optical device modeling to determine how the material properties affect device performance. Our best solar energy conversion efficiencies are 16.9% for a non-textured, single-sided device with an aluminum back surface field contact on a p-type float zone silicon wafer, and 17.8% for a textured double-sided device on a p-type float zone silicon wafer.

Authors:
; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
891543
Report Number(s):
NREL/CP-520-39932
TRN: US200622%%85
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), 7-12 May 2006, Waikoloa, Hawaii
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 47 OTHER INSTRUMENTATION; ABSORPTION; ALUMINIUM; DEPOSITION; EFFICIENCY; ELLIPSOMETRY; ENERGY CONVERSION; HETEROJUNCTIONS; OPTICAL PROPERTIES; OPTIMIZATION; PROCESSING; SILICON; SOLAR CELLS; SOLAR ENERGY CONVERSION; THICKNESS; THIN FILMS; PV; IN-SITU; EX SITU; SPECTROSCOPIC ELLIPSOMETRY; HETEROJUNCTION; OPTICAL; ELECTRONIC; STRUCTURAL PROPERTIES; DEVICE; Solar Energy - Photovoltaics; Silicon Materials and Devices

Citation Formats

Levi, D., Iwaniczko, E., Page, M., Branz, H., and Wang, T.. Silicon Heterojunction Solar Cell Characterization and Optimization Using In Situ and Ex Situ Spectroscopic Ellipsometry: Preprint. United States: N. p., 2006. Web. doi:10.1109/WCPEC.2006.279828.
Levi, D., Iwaniczko, E., Page, M., Branz, H., & Wang, T.. Silicon Heterojunction Solar Cell Characterization and Optimization Using In Situ and Ex Situ Spectroscopic Ellipsometry: Preprint. United States. doi:10.1109/WCPEC.2006.279828.
Levi, D., Iwaniczko, E., Page, M., Branz, H., and Wang, T.. Mon . "Silicon Heterojunction Solar Cell Characterization and Optimization Using In Situ and Ex Situ Spectroscopic Ellipsometry: Preprint". United States. doi:10.1109/WCPEC.2006.279828. https://www.osti.gov/servlets/purl/891543.
@article{osti_891543,
title = {Silicon Heterojunction Solar Cell Characterization and Optimization Using In Situ and Ex Situ Spectroscopic Ellipsometry: Preprint},
author = {Levi, D. and Iwaniczko, E. and Page, M. and Branz, H. and Wang, T.},
abstractNote = {We use in-situ and ex-situ spectroscopic ellipsometry to characterize the optical, electronic, and structural properties of individual layers and completed silicon heterojunction devices. The combination of in-situ measurements during thin film deposition with ex-situ measurements of completed devices allows us to understand both the growth dynamics of the materials and the effects of each processing step on material properties. In-situ ellipsometry measurements enable us to map out how the optical properties change with deposition conditions, pointing the way towards reducing the absorption loss and increasing device efficiency. We use the measured optical properties and thickness of the i-, n-, and p-layers in optical device modeling to determine how the material properties affect device performance. Our best solar energy conversion efficiencies are 16.9% for a non-textured, single-sided device with an aluminum back surface field contact on a p-type float zone silicon wafer, and 17.8% for a textured double-sided device on a p-type float zone silicon wafer.},
doi = {10.1109/WCPEC.2006.279828},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon May 01 00:00:00 EDT 2006},
month = {Mon May 01 00:00:00 EDT 2006}
}

Conference:
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