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Title: The Optical Properties of a Polished Uranium Surface and its Epitaxial Oxide, and the Rate of Oxide Growth Determined by Spectrophotometry

Abstract

Wide-band reflectrometry and ellipsometry have been used to determine the optical properties n and k of freshly polished uranium and of the epitaxial oxide layer, and also the rate of oxide growth in air. Results for uranium metal as well as for epitaxial oxide are compared with single wavelength ellipsometry literature values.

Authors:
;
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
889994
Report Number(s):
UCRL-PROC-217595
TRN: US200620%%195
DOE Contract Number:
W-7405-ENG-48
Resource Type:
Conference
Resource Relation:
Conference: Presented at: Materials Research Society Fall 2005, Boston, MA, United States, Nov 28 - Dec 02, 2005
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AIR; ELLIPSOMETRY; OPTICAL PROPERTIES; OXIDES; SPECTROPHOTOMETRY; URANIUM; WAVELENGTHS

Citation Formats

Siekhaus, W, and Nelson, A. The Optical Properties of a Polished Uranium Surface and its Epitaxial Oxide, and the Rate of Oxide Growth Determined by Spectrophotometry. United States: N. p., 2005. Web.
Siekhaus, W, & Nelson, A. The Optical Properties of a Polished Uranium Surface and its Epitaxial Oxide, and the Rate of Oxide Growth Determined by Spectrophotometry. United States.
Siekhaus, W, and Nelson, A. Mon . "The Optical Properties of a Polished Uranium Surface and its Epitaxial Oxide, and the Rate of Oxide Growth Determined by Spectrophotometry". United States. doi:. https://www.osti.gov/servlets/purl/889994.
@article{osti_889994,
title = {The Optical Properties of a Polished Uranium Surface and its Epitaxial Oxide, and the Rate of Oxide Growth Determined by Spectrophotometry},
author = {Siekhaus, W and Nelson, A},
abstractNote = {Wide-band reflectrometry and ellipsometry have been used to determine the optical properties n and k of freshly polished uranium and of the epitaxial oxide layer, and also the rate of oxide growth in air. Results for uranium metal as well as for epitaxial oxide are compared with single wavelength ellipsometry literature values.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Dec 05 00:00:00 EST 2005},
month = {Mon Dec 05 00:00:00 EST 2005}
}

Conference:
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  • Optical constants of a [111] UO{sub 2} surface, aged in air, were measured in the range from .8 and 5 eV using ellipsometric spectroscopy. The ellipsometric data acquired at angles of incidence of 65, 70 and 75 degrees have been fitted by two techniques: (1) First at low energies with a Cauchy-Urbach model extended by the point by point method to higher energies and shown to be Kramers-Kronig consistent, (2) by a Gauss-Lorentz and a Tauc Lorentz Oscillator. Both techniques lead to dielectric constants that differ at energies above 2 eV substantially from Schoenes for vacuum-annealed [111] UO{sub 2}. Ramanmore » spectra taken at 632 nm show no indication of hyper-stoichiometry.« less
  • Raman spectroscopy can be performed with micrometer resolution and can thus be used to determine the dependence of oxide thickness on the substrate's grain structure or local impurity inclusions. The Raman signal amplitude emitted from an epitaxial uranium oxide layer as a function of oxide thickness has been modeled for light of 632.8 nm wavelength incident on the oxide and reflected from the uranium substrate using the optical properties determined by spectrophotometry. The model shows that the Raman signal increases with oxide thickness and saturates at about 150 nm thickness. The model was compared with the measured Raman signal amplitudemore » of an epitaxial uranium oxide layer growing in air with a known time dependence of oxide growth.« less
  • In-situ diagnostics of pulsed laser ablated plasmas have been used to characterize thin film growth environments. It is important to correlate the plasma conditions with film properties such as stoichiometry and crystallinity. Optical emission spectroscopy has proved to be a very useful and robust technique for plasma diagnostics. The authors have carried out optical spectroscopy of the laser plume of a AG/YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} composite target under different oxygen base pressures generated by a 248 nm KrF pulsed excimer laser with a pulse width of 20 ns. The results of the optical spectroscopy have been compared with that frommore » a pure target of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO). The YBCO films were deposited on MgO(100) substrates at temperatures between 600--700 C. The film composition and properties were analyzed using Auger spectroscopy, transmission electron microscopy, x-ray diffraction and electrical transport measurements. The films grown from Ag/YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} have demonstrated enhanced crystallinity and superconducting properties though Ag concentrations in the films were low and decreased further emission spectroscopy indicates that the formation of silver oxide (AgO) species in the plasma is the key to enhanced oxygenation of the superconducting YBCO films, which leads to the possibility of lowering processing temperatures for the growth of oxide thin films.« less