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Title: A critical implanted CI concentration for pit initiation on aluminum thin films.

Abstract

No abstract prepared.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Laboratories
Sponsoring Org.:
USDOE
OSTI Identifier:
886645
Report Number(s):
SAND2005-7774J
TRN: US200616%%1038
DOE Contract Number:
AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Proposed for publication in the Journal of the Electrochemical Society.
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM; THIN FILMS; ION IMPLANTATION; PITTING CORROSION; NUCLEATION

Citation Formats

Zavadil, Kevin Robert, Wall, Frederick Douglas, Barbour, John Charles, Johnson, Craig Mackenzie, and Serna, Lysle M. A critical implanted CI concentration for pit initiation on aluminum thin films.. United States: N. p., 2005. Web.
Zavadil, Kevin Robert, Wall, Frederick Douglas, Barbour, John Charles, Johnson, Craig Mackenzie, & Serna, Lysle M. A critical implanted CI concentration for pit initiation on aluminum thin films.. United States.
Zavadil, Kevin Robert, Wall, Frederick Douglas, Barbour, John Charles, Johnson, Craig Mackenzie, and Serna, Lysle M. Thu . "A critical implanted CI concentration for pit initiation on aluminum thin films.". United States. doi:.
@article{osti_886645,
title = {A critical implanted CI concentration for pit initiation on aluminum thin films.},
author = {Zavadil, Kevin Robert and Wall, Frederick Douglas and Barbour, John Charles and Johnson, Craig Mackenzie and Serna, Lysle M.},
abstractNote = {No abstract prepared.},
doi = {},
journal = {Proposed for publication in the Journal of the Electrochemical Society.},
number = ,
volume = ,
place = {United States},
year = {Thu Dec 01 00:00:00 EST 2005},
month = {Thu Dec 01 00:00:00 EST 2005}
}
  • No abstract prepared.
  • No abstract prepared.
  • The influence of helium ion implantation on the parallel critical field H/sub c parallel/and the angular dependence of H/sub c/ in In films has been investigated. It has been observed that the dependence of H/sub c parallel/on the temperature, the film thickness d, and the mean free path l agrees satisfactorily with the predictions of theory for low doses of irradiation (N< or =7x10/sup 17/ ion/cm/sup 2/). For high irradiation doses a number of anomalies is observed in the behavior of H/sub c parallel/and the angular dependence of H/sub c/: the value of the critical thickness at which a vortexmore » state occurs in a film in a parallel magnetic field turns out to be substantially smaller than predicted by the Abrikosov--Kulik theory; a deviation from the angular dependence of H/sub c/ computed by Tinkham is detected in the temperature range Tapprox.T/sub c/ where zeta (t) >>d for high irradiation doses H/sub c parallel/diminishes with a decrease in l. It is shown that the first two anomalies in the behavior of H/sub c parallel/and H/sub c/(theta) can be explained by anisotropies of the transport properties, and therefore, in the coherence lengths in indium films with helium implantation. The last anomaly is associated with the effect of film swelling because of the formation of volume defects in the form of gas-filled pores therein. The possibility of an analogy between In films with helium implantation and laminar superconductors is examined.« less
  • The role that Al{sub 3}Fe intermetallic inclusions play during initiation of pitting corrosion on aluminum alloys was investigated in 0.6 M NaCl. In aerated solutions microscopic observations showed the growth of cavities in the host metal adjacent to inclusions. The rest potential of synthetic Al{sub 3}Fe was measured in aerated and deaerated NaCl solutions over a range of bulk pH values between 2 and 12 and was found to act as a cathode. In aerated solutions rotating disk electrode experiments on synthetic Al{sub 3}Fe electrodes verified that the cathodic reaction corresponded to the reduction of dissolved oxygen. With scanning pHmore » microelectrodes, measurements were carried out near synthetic Al{sub 3}Fe electrodes which were coupled in a galvanic cell with Al-6061 in NaCl solution. In addition, the pH measured over Al-6061 at a distance of 25--30 {micro}m from the surface was observed to fluctuate between pH 4 and 8.5 for the first 2 h of immersion in NaCl solutions. Atomic force microscopy images of Al-6061 immersed in buffered aerated 0.6 M NaCl solution (pH 5.5) did not show any evidence of dissolution of the Al around intermetallics. These measurements support the view that Al{sub 3}Fe particles in Al-6061 serve as local cathodes, that a high pH develops around the intermetallic particles by dissolving alkaline cavities to evolve into a small number of rapidly dissolving acidic pits.« less
  • High-purity aluminum samples were implanted with 35 keV Cl{sup +} then polarized in both Cl{sup -}-containing and Cl{sup -}-free electrolytes in order to ascertain corrosion behavior as a function of Cl{sup -} content in the oxide. Implant fluence between 5 x 10{sup 15} and 2 x 10{sup 16} Cl{sup +} cm{sup -2} resulted in little or no localized attack. Implant fluences of 3 x 10{sup 16} and 5 x 10{sup 16} Cl{sup +} cm{sup -2} resulted in significant pitting in a Cl{sup -}-free electrolyte with the severity scaling as a function of implant fluence. The low variability in the pittingmore » behavior of the 5 x 10{sup 16} Cl{sup +} cm{sup -2} sample suggests that this implant dosage results in a critical Cl{sup -} concentration in the oxide for pit nucleation. The passive current density (i{sub pass}) decreased with increasing implant fluence. A space-charge effect is proposed to account for this phenomenon, although effects from defect interactions and possible oxide thickening are still under consideration.« less