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Title: Deposition of Photosensitive Hydrogenated Amorphous Silicon-Germanium Films with a Tantalum Hot Wire

Abstract

No abstract prepared.

Authors:
; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
885108
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Journal Article
Resource Relation:
Journal Name: Thin Solid Films; Journal Issue: 1-22006
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; DEPOSITION; TANTALUM; SOLAR ENERGY; MATERIALS; AMORPHOUS SILICON-GERMANIUM FILMS; HOT-WIRE CHEMICAL VAPOR DEPOSITION (HWCVD); OPTICAL BANDGAP; TAUC BANDGAP; PHOTO-TO-DARK CONDUCTIVITY RATIO; PHOTOSENSITIVITY; PHOTON ABSORPTION COEFFICIENT; Solar Energy - Photovoltaics; Silicon Materials and Devices

Citation Formats

Xu, Y., Mahan, A. H., Gedvilas, L. M., Reedy, R. C., and Branz, H. M. Deposition of Photosensitive Hydrogenated Amorphous Silicon-Germanium Films with a Tantalum Hot Wire. United States: N. p., 2006. Web. doi:10.1016/j.tsf.2005.07.171.
Xu, Y., Mahan, A. H., Gedvilas, L. M., Reedy, R. C., & Branz, H. M. Deposition of Photosensitive Hydrogenated Amorphous Silicon-Germanium Films with a Tantalum Hot Wire. United States. doi:10.1016/j.tsf.2005.07.171.
Xu, Y., Mahan, A. H., Gedvilas, L. M., Reedy, R. C., and Branz, H. M. Sun . "Deposition of Photosensitive Hydrogenated Amorphous Silicon-Germanium Films with a Tantalum Hot Wire". United States. doi:10.1016/j.tsf.2005.07.171.
@article{osti_885108,
title = {Deposition of Photosensitive Hydrogenated Amorphous Silicon-Germanium Films with a Tantalum Hot Wire},
author = {Xu, Y. and Mahan, A. H. and Gedvilas, L. M. and Reedy, R. C. and Branz, H. M.},
abstractNote = {No abstract prepared.},
doi = {10.1016/j.tsf.2005.07.171},
journal = {Thin Solid Films},
number = 1-22006,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}