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Title: Combinatorial Exploration of Novel Transparent Conducting Oxide Materials

Abstract

High-throughput combinatorial approaches have been used for the discovery and optimization of transparent conducting oxide (TCO) materials for PV applications. We report on current investigations in In-Zn-O, In-Ti-O and In-Mo-O systems. The InZnO system is shown to be amorphous in the best conducting range with a conductivity of ~ 3000 Ω-cm-1 for 50%-70% In/Zn. The amorphous InZnO films are very smooth (2..ANG.. rms). In-Ti-O is found to be an excellent high-mobility TCO with mobilities of greater than 80 cm2/v-sec and conductivities of more than 6000 Ω-cm-1 for sputtered thin film materials.

Authors:
; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
882826
Report Number(s):
NREL/CP-520-38999
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Related Information: Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-1020060-2245; NREL/CD-520-38577)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; PHOTOVOLTAICS; SOLAR; TRANSPARENT CONDUCTING OXIDE; PV; NREL; Solar Energy - Photovoltaics; Silicon Materials and Devices

Citation Formats

Ginley, D. S., van Hest, M. F. A. M., Young, D., Teplin, C. W., Alleman, J. L., Dabney, M. S., Gedvilas, L. M., Keyes, B. M., To, B., Perkins, J. D., Taylor, M. P., and Readey, D. Combinatorial Exploration of Novel Transparent Conducting Oxide Materials. United States: N. p., 2005. Web.
Ginley, D. S., van Hest, M. F. A. M., Young, D., Teplin, C. W., Alleman, J. L., Dabney, M. S., Gedvilas, L. M., Keyes, B. M., To, B., Perkins, J. D., Taylor, M. P., & Readey, D. Combinatorial Exploration of Novel Transparent Conducting Oxide Materials. United States.
Ginley, D. S., van Hest, M. F. A. M., Young, D., Teplin, C. W., Alleman, J. L., Dabney, M. S., Gedvilas, L. M., Keyes, B. M., To, B., Perkins, J. D., Taylor, M. P., and Readey, D. Tue . "Combinatorial Exploration of Novel Transparent Conducting Oxide Materials". United States. doi:. https://www.osti.gov/servlets/purl/882826.
@article{osti_882826,
title = {Combinatorial Exploration of Novel Transparent Conducting Oxide Materials},
author = {Ginley, D. S. and van Hest, M. F. A. M. and Young, D. and Teplin, C. W. and Alleman, J. L. and Dabney, M. S. and Gedvilas, L. M. and Keyes, B. M. and To, B. and Perkins, J. D. and Taylor, M. P. and Readey, D.},
abstractNote = {High-throughput combinatorial approaches have been used for the discovery and optimization of transparent conducting oxide (TCO) materials for PV applications. We report on current investigations in In-Zn-O, In-Ti-O and In-Mo-O systems. The InZnO system is shown to be amorphous in the best conducting range with a conductivity of ~ 3000 Ω-cm-1 for 50%-70% In/Zn. The amorphous InZnO films are very smooth (2..ANG.. rms). In-Ti-O is found to be an excellent high-mobility TCO with mobilities of greater than 80 cm2/v-sec and conductivities of more than 6000 Ω-cm-1 for sputtered thin film materials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 01 00:00:00 EST 2005},
month = {Tue Nov 01 00:00:00 EST 2005}
}

Conference:
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  • Transparent conducting oxides (TCOs) can serve a variety of important functions in thin film photovoltaics such as transparent electrical contacts, antireflection coatings and chemical barriers. Two areas of particular interest are TCOs that can be deposited at low temperatures and TCOs with high carrier mobilities. We have employed combinatorial high-throughput approaches to investigate both these areas. Conductivities of s = 2500 W-1-cm-1 have been obtained for In-Zn-O (IZO) films deposited at 100 C and s > 5000 W-1-cm-1 for In-Ti-O (ITiO) and In-Mo-O (IMO) films deposited at 550 C. The highest mobility obtained was 83 cm2/V-sec for ITiO deposited atmore » 550 C.« less
  • Organic light emitting device (OLEDs) may provide a low-cost, long-lived, and efficient wide area lighting solution if a number of challenges in reliability, cost and efficiency can be overcome. There is a need to develop new TCOs for use as the anode in a bottom-emitting device that do not contain In, have optimal work function, conductivity and visible light transmission properties, possess acceptable stability and possess a high work function to match the deep HOMO of blue OLED HTLs. We report here results from our efforts to scale up sputter deposition on large area substrates (up to 12”x12”) of TCOmore » candidates (including Ga:ZnO and Zn:SnO) identified using combinatorial methods. We present transmission, electrical properties, work function, compositional and structural data for these films. Finally, we have evaluated the use of these materials in OLEDs, and show device performance comparisons between devices fabricated on combinatorial substrates, single composition substrates, and substrates grown at larger scale (up to 12”x12”). Post-operation analysis of the materials using a combination of surface analysis and electron microscopy techniques was performed. The device results demonstrate that we are able to generate substrates with the appropriate work function to reduce the operating voltage of blue phosphorescent OLEDs compared to commercial ITO, which we ascribe to improved work function-HOMO energy matching leading to more efficient charge injection into the device HTL.« less
  • Transparent conducting oxides (TCOs) can serve a variety of important functions in thin-film photovoltaics such as transparent electrical contacts, antireflection coatings, and chemical barriers. Two areas of particular interest are TCOs that can be deposited at low temperatures and TCOs with high carrier mobilities. We have employed combinatorial high-throughput approaches to investigate both these areas. Conductivities of s = 2500 W-1-cm-1 have been obtained for In-Zn-O (IZO) films deposited at 100 C and s > 5000 W-1-cm-1 for In-Ti-O (ITiO) and In-Mo-O (IMO) films deposited at 550 C. The highest mobility obtained was 83 cm2/V-s for ITiO deposited at 550more » C.« less
  • The rear side metallization of Si solar cells comes with a number of inherent losses and trade-offs: a larger metallized area fraction improves fill factor at the expense of open-circuit voltage, depositing directly on textured Si leads to low contact resistivity at the expense of short-circuit current, and some metallization processes create defects in Si. To mitigate many of these losses we have developed a novel approach for rear side metallization of Si solar cells, utilizing a transparent conducting adhesive (TCA) to metallize Si without exposing the wafer to the metal deposition process. The TCA consists of an insulating adhesivemore » loaded with conductive microspheres. This approach leads to virtually no loss in implied open-circuit voltage upon metallization. Electrical measurements showed that contact resistivities of 3-9 ..omega.. cm2 were achieved, and an analysis of the transit resistance per microsphere showed that less than 1 ..omega.. cm2 should be achievable with higher microsphere loading of the TCA.« less