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Title: SIMS Study of Elemental Diffusion During Solid Phase Crystallization of Amorphous Silicon

Abstract

Crystallization of hydrogenated amorphous silicon (a-Si:H) films deposited on low-cost substrates shows potential for solar cell applications. Secondary ion mass spectrometry (SIMS) was used to study impurity incorporation, hydrogen evolution, and dopant diffusion during the crystallization process

Authors:
; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
882819
Report Number(s):
NREL/CP-520-38974
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Related Information: Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-1020060-2245; NREL/CD-520-38577)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; PHOTOVOLTAICS; SOLAR; AMORPHOUS SILICON; CRYSTALLIZATION; PV; NREL; Solar Energy - Photovoltaics; Silicon Materials and Devices

Citation Formats

Reedy, R. C., Young, D., Branz, H. M., and Wang, Q.. SIMS Study of Elemental Diffusion During Solid Phase Crystallization of Amorphous Silicon. United States: N. p., 2005. Web.
Reedy, R. C., Young, D., Branz, H. M., & Wang, Q.. SIMS Study of Elemental Diffusion During Solid Phase Crystallization of Amorphous Silicon. United States.
Reedy, R. C., Young, D., Branz, H. M., and Wang, Q.. Tue . "SIMS Study of Elemental Diffusion During Solid Phase Crystallization of Amorphous Silicon". United States. doi:. https://www.osti.gov/servlets/purl/882819.
@article{osti_882819,
title = {SIMS Study of Elemental Diffusion During Solid Phase Crystallization of Amorphous Silicon},
author = {Reedy, R. C. and Young, D. and Branz, H. M. and Wang, Q.},
abstractNote = {Crystallization of hydrogenated amorphous silicon (a-Si:H) films deposited on low-cost substrates shows potential for solar cell applications. Secondary ion mass spectrometry (SIMS) was used to study impurity incorporation, hydrogen evolution, and dopant diffusion during the crystallization process},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 01 00:00:00 EST 2005},
month = {Tue Nov 01 00:00:00 EST 2005}
}

Conference:
Other availability
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