skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: SIMS Study of Elemental Diffusion During Solid Phase Crystallization of Amorphous Silicon

Abstract

Crystallization of hydrogenated amorphous silicon (a-Si:H) films deposited on low-cost substrates shows potential for solar cell applications. Secondary ion mass spectrometry (SIMS) was used to study impurity incorporation, hydrogen evolution, and dopant diffusion during the crystallization process

Authors:
; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
882819
Report Number(s):
NREL/CP-520-38974
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Related Information: Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-1020060-2245; NREL/CD-520-38577)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; PHOTOVOLTAICS; SOLAR; AMORPHOUS SILICON; CRYSTALLIZATION; PV; NREL; Solar Energy - Photovoltaics; Silicon Materials and Devices

Citation Formats

Reedy, R. C., Young, D., Branz, H. M., and Wang, Q. SIMS Study of Elemental Diffusion During Solid Phase Crystallization of Amorphous Silicon. United States: N. p., 2005. Web.
Reedy, R. C., Young, D., Branz, H. M., & Wang, Q. SIMS Study of Elemental Diffusion During Solid Phase Crystallization of Amorphous Silicon. United States.
Reedy, R. C., Young, D., Branz, H. M., and Wang, Q. Tue . "SIMS Study of Elemental Diffusion During Solid Phase Crystallization of Amorphous Silicon". United States. doi:. https://www.osti.gov/servlets/purl/882819.
@article{osti_882819,
title = {SIMS Study of Elemental Diffusion During Solid Phase Crystallization of Amorphous Silicon},
author = {Reedy, R. C. and Young, D. and Branz, H. M. and Wang, Q.},
abstractNote = {Crystallization of hydrogenated amorphous silicon (a-Si:H) films deposited on low-cost substrates shows potential for solar cell applications. Secondary ion mass spectrometry (SIMS) was used to study impurity incorporation, hydrogen evolution, and dopant diffusion during the crystallization process},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 01 00:00:00 EST 2005},
month = {Tue Nov 01 00:00:00 EST 2005}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share:
  • Solid-phase crystallization (SPC) rates are compared in amorphous silicon films prepared by three different methods: hot-wire chemical vapor deposition (HWCVD), plasma-enhanced chemical vapor deposition (PECVD), and electron-beam physical vapor deposition (e-beam). Random SPC proceeds approximately 5 and 13 times slower in PECVD and e-beam films, respectively, as compared to HWCVD films. Doping accelerates random SPC in e-beam films but has little effect on the SPC rate of HWCVD films. In contrast, the crystalline growth front in solid-phase epitaxy experiments propagates at similar speed in HWCVD, PECVD, and e-beam amorphous Si films. This strongly suggests that the observed large differences inmore » random SPC rates originate from different nucleation rates in these materials while the grain growth rates are relatively similar. The larger grain sizes observed for films that exhibit slower random SPC support this suggestion.« less
  • No abstract prepared.
  • No abstract prepared.
  • No abstract prepared.
  • Epitaxial growth kinetics in ion-implanted and UHV-deposited amorphous-silicon films on Si (100) substrates is reviewed. Crystallization kinetics are measured during laser heating, and microstructural changes are investigated. From 475/sup 0/C to 1350/sup 0/C and rates from .01 A/sec to 10/sup 8/ A/sec, solid-phase epitaxy (SPE) is well described by an Arrhenius expression. Kinetics parameters are determined for intrinsic SPE in self-implanted and UHV-deposited amorphous films; deviations from intrinsic behavior caused by the addition of B, P, F, and As are studied as a function of interface position from 500 to 1000/sup 0/C. Effects of dopant compensation, temperature-dependent kinetic competition betweenmore » SPE and precipitate formation in asenic-implanted films, and the combined effects of rate retarding (F) and rate-enhancing (B) impurities are reported. Finally, SPE rates in excess of 10/sup 8/ A/sec above 1350/sup 0/C are discussed with respect to a proposed depression in the Si(a) melting temperature. Comparison of kinetics with transition-state predictions imply that T/sub m/(a) < T/sub m/(c); however, the results strongly suggest that in cw laser-heating experiments, the transition from S(a) ..-->.. Si(c) is kinetically favored over the two-step Si(a) ..-->.. Si(l) ..-->.. Si(c) transition between T/sub m/(a) and T/sub m/(c).« less