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Title: Polycrystalline Thin Film Device Degradation Studies

Abstract

Oxygen during vapor CdCl2 (VCC) treatments significantly reduced resistive shunts observed in CdS/CdTe polycrystalline devices using thinner CdS layers during 100 deg C, open-circuit, 1-sun accelerated stress testing. Cu oxidation resulting from the reduction of various trace oxides present in as-grown and VCC treated films is the proposed mechanism by which Cu diffusion, and subsequent shunts are controlled. Graphite paste layers between metallization and CdTe behave like diffusion barriers and similarly benefit device stability. Ni-based contacts form a protective Ni2Te3 intermetallic layer that reduces metal diffusion but degrades performance through increased series resistance.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
882806
Report Number(s):
NREL/CP-520-39003
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Related Information: Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-1020060-2245; NREL/CD-520-38577)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; PHOTOVOLTAICS; SOLAR; POLYCRYSTALLINE; THIN FILM; PV; NREL; Solar Energy - Photovoltaics

Citation Formats

Albin, D. S., McMahon, T. J., Pankow, J. W., Noufi, R., Demtsu, S. H., and Davies, A. Polycrystalline Thin Film Device Degradation Studies. United States: N. p., 2005. Web.
Albin, D. S., McMahon, T. J., Pankow, J. W., Noufi, R., Demtsu, S. H., & Davies, A. Polycrystalline Thin Film Device Degradation Studies. United States.
Albin, D. S., McMahon, T. J., Pankow, J. W., Noufi, R., Demtsu, S. H., and Davies, A. Tue . "Polycrystalline Thin Film Device Degradation Studies". United States. doi:. https://www.osti.gov/servlets/purl/882806.
@article{osti_882806,
title = {Polycrystalline Thin Film Device Degradation Studies},
author = {Albin, D. S. and McMahon, T. J. and Pankow, J. W. and Noufi, R. and Demtsu, S. H. and Davies, A.},
abstractNote = {Oxygen during vapor CdCl2 (VCC) treatments significantly reduced resistive shunts observed in CdS/CdTe polycrystalline devices using thinner CdS layers during 100 deg C, open-circuit, 1-sun accelerated stress testing. Cu oxidation resulting from the reduction of various trace oxides present in as-grown and VCC treated films is the proposed mechanism by which Cu diffusion, and subsequent shunts are controlled. Graphite paste layers between metallization and CdTe behave like diffusion barriers and similarly benefit device stability. Ni-based contacts form a protective Ni2Te3 intermetallic layer that reduces metal diffusion but degrades performance through increased series resistance.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 01 00:00:00 EST 2005},
month = {Tue Nov 01 00:00:00 EST 2005}
}

Conference:
Other availability
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