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Title: Rapid Thermal Annealing of HWCVD a-Si:H Films: The Effect of the Film Hydrogen Content on the Crystallization Kinetics, Surface Morphology, and Grain Growth

Abstract

We report the effect of the hydrogen (H) content (CH) on the crystallization kinetics, surface morphology and grain growth for Hot Wire CVD a-Si:H films containing 12.5 and 2.7 at.% H which are crystallized by rapid thermal anneal (RTA). For the high CH film we observe explosive H evolution, with a resultant destruction of the film for RTA temperatures >750 deg C. At RTA temperatures ~600 deg C, both films remain intact with similar morphologies. At this same lower RTA, the incubation and crystallization times decrease, and the grain size as measured by X-Ray Diffraction increases with decreasing film CH. SIMS measurements indicate that a similar film CH (<0.5 at.%) exists in both films when crystallization commences. The benefits of a two-step annealing process for the high CH film are documented.

Authors:
; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
882613
Report Number(s):
NREL/CP-520-38953
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Related Information: Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-1020060-2245; NREL/CD-520-38577)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; PHOTOVOLTAICS; SOLAR; CDTE; PV; NREL; Solar Energy - Photovoltaics

Citation Formats

Mahan, A. H., Reedy, R. C. Jr., Ginley, D. S., Roy, B., and Readey, D. W. Rapid Thermal Annealing of HWCVD a-Si:H Films: The Effect of the Film Hydrogen Content on the Crystallization Kinetics, Surface Morphology, and Grain Growth. United States: N. p., 2005. Web.
Mahan, A. H., Reedy, R. C. Jr., Ginley, D. S., Roy, B., & Readey, D. W. Rapid Thermal Annealing of HWCVD a-Si:H Films: The Effect of the Film Hydrogen Content on the Crystallization Kinetics, Surface Morphology, and Grain Growth. United States.
Mahan, A. H., Reedy, R. C. Jr., Ginley, D. S., Roy, B., and Readey, D. W. Tue . "Rapid Thermal Annealing of HWCVD a-Si:H Films: The Effect of the Film Hydrogen Content on the Crystallization Kinetics, Surface Morphology, and Grain Growth". United States. doi:. https://www.osti.gov/servlets/purl/882613.
@article{osti_882613,
title = {Rapid Thermal Annealing of HWCVD a-Si:H Films: The Effect of the Film Hydrogen Content on the Crystallization Kinetics, Surface Morphology, and Grain Growth},
author = {Mahan, A. H. and Reedy, R. C. Jr. and Ginley, D. S. and Roy, B. and Readey, D. W.},
abstractNote = {We report the effect of the hydrogen (H) content (CH) on the crystallization kinetics, surface morphology and grain growth for Hot Wire CVD a-Si:H films containing 12.5 and 2.7 at.% H which are crystallized by rapid thermal anneal (RTA). For the high CH film we observe explosive H evolution, with a resultant destruction of the film for RTA temperatures >750 deg C. At RTA temperatures ~600 deg C, both films remain intact with similar morphologies. At this same lower RTA, the incubation and crystallization times decrease, and the grain size as measured by X-Ray Diffraction increases with decreasing film CH. SIMS measurements indicate that a similar film CH (<0.5 at.%) exists in both films when crystallization commences. The benefits of a two-step annealing process for the high CH film are documented.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 01 00:00:00 EST 2005},
month = {Tue Nov 01 00:00:00 EST 2005}
}

Conference:
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