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Title: 17.5% p-Type Silicon Heterojunction Solar Cells with HWCVD a-Si:H as the Emitter and Back Contact

Abstract

Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are used as both emitters and back contacts in silicon heterojunction solar cells. Low interface recombination velocity and high open-circuit voltage are achieved by a low substrate temperature (<150 deg C) intrinsic a-Si:H deposition which ensures immediate amorphous silicon deposition. This is followed by deposition of doped a-Si:H at a higher temperature (>200 deg C) which appears to improve dopant activation. With an i/n a-Si:H emitter, we obtain a confirmed efficiency of 17.1% on textured p-type float-zone (FZ) silicon with a screen-printed aluminum back-surface-field (Al-BSF) contact. Employing a-Si:H as both the front emitter and the back contact, we achieve a confirmed efficiency of 17.5%, the highest reported efficiency for a p-type c-Si based heterojunction solar cell.

Authors:
; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
882612
Report Number(s):
NREL/CP-520-38942
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Related Information: Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-1020060-2245; NREL/CD-520-38577)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; PHOTOVOLTAICS; SOLAR; HETEROJUNCTION SOLAR CELLS; PV; NREL; Solar Energy - Photovoltaics; Silicon Materials and Devices

Citation Formats

Wang, T. H., Page, M. R., Iwaniczko, E., Wang, Q., Xu,Y., Yan, Y., Roybal, L., Levi, D., Bauer, R., Branz, H. M., Yelundur, V., and Rohatgi, A. 17.5% p-Type Silicon Heterojunction Solar Cells with HWCVD a-Si:H as the Emitter and Back Contact. United States: N. p., 2005. Web.
Wang, T. H., Page, M. R., Iwaniczko, E., Wang, Q., Xu,Y., Yan, Y., Roybal, L., Levi, D., Bauer, R., Branz, H. M., Yelundur, V., & Rohatgi, A. 17.5% p-Type Silicon Heterojunction Solar Cells with HWCVD a-Si:H as the Emitter and Back Contact. United States.
Wang, T. H., Page, M. R., Iwaniczko, E., Wang, Q., Xu,Y., Yan, Y., Roybal, L., Levi, D., Bauer, R., Branz, H. M., Yelundur, V., and Rohatgi, A. Tue . "17.5% p-Type Silicon Heterojunction Solar Cells with HWCVD a-Si:H as the Emitter and Back Contact". United States. doi:. https://www.osti.gov/servlets/purl/882612.
@article{osti_882612,
title = {17.5% p-Type Silicon Heterojunction Solar Cells with HWCVD a-Si:H as the Emitter and Back Contact},
author = {Wang, T. H. and Page, M. R. and Iwaniczko, E. and Wang, Q. and Xu,Y. and Yan, Y. and Roybal, L. and Levi, D. and Bauer, R. and Branz, H. M. and Yelundur, V. and Rohatgi, A.},
abstractNote = {Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are used as both emitters and back contacts in silicon heterojunction solar cells. Low interface recombination velocity and high open-circuit voltage are achieved by a low substrate temperature (<150 deg C) intrinsic a-Si:H deposition which ensures immediate amorphous silicon deposition. This is followed by deposition of doped a-Si:H at a higher temperature (>200 deg C) which appears to improve dopant activation. With an i/n a-Si:H emitter, we obtain a confirmed efficiency of 17.1% on textured p-type float-zone (FZ) silicon with a screen-printed aluminum back-surface-field (Al-BSF) contact. Employing a-Si:H as both the front emitter and the back contact, we achieve a confirmed efficiency of 17.5%, the highest reported efficiency for a p-type c-Si based heterojunction solar cell.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 01 00:00:00 EST 2005},
month = {Tue Nov 01 00:00:00 EST 2005}
}

Conference:
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