skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Atomic Structure and Electronic Properties of c-Si/a-Si:H Interfaces in Si Heterojunction Solar Cells

Abstract

The atomic structure and electronic properties of crystalline silicon/hydrogenated amorphous silicon (c-Si/a-Si:H) interfaces in silicon heterojunction (SHJ) solar cells are investigated by high-resolution transmission electron microscopy, atomic-resolution Z-contrast imaging, and electron energy loss spectroscopy. We find that all high-performance SHJ solar cells exhibit atomically abrupt and flat c-Si/a-Si:H interfaces and high disorder of the a-Si:H layers. These atomically abrupt and flat c-Si/a-Si:H interfaces can be realized by direct deposition of a-Si:H on c-Si substrates at a substrate temperature below 150 deg C by hot-wire chemical vapor deposition from pure silane.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
882601
Report Number(s):
NREL/CP-520-38935
DOE Contract Number:
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Related Information: Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-1020060-2245; NREL/CD-520-38577)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; PHOTOVOLTAICS; SOLAR; HETEROJUNCTION SOLAR CELLS; PV; NREL; Solar Energy - Photovoltaics; Silicon Materials and Devices

Citation Formats

Yan, Y., Page, M., Wang, Q., Branz, H. M., Wang, T. H., and Al-Jassim, M. M.. Atomic Structure and Electronic Properties of c-Si/a-Si:H Interfaces in Si Heterojunction Solar Cells. United States: N. p., 2005. Web.
Yan, Y., Page, M., Wang, Q., Branz, H. M., Wang, T. H., & Al-Jassim, M. M.. Atomic Structure and Electronic Properties of c-Si/a-Si:H Interfaces in Si Heterojunction Solar Cells. United States.
Yan, Y., Page, M., Wang, Q., Branz, H. M., Wang, T. H., and Al-Jassim, M. M.. Tue . "Atomic Structure and Electronic Properties of c-Si/a-Si:H Interfaces in Si Heterojunction Solar Cells". United States. doi:. https://www.osti.gov/servlets/purl/882601.
@article{osti_882601,
title = {Atomic Structure and Electronic Properties of c-Si/a-Si:H Interfaces in Si Heterojunction Solar Cells},
author = {Yan, Y. and Page, M. and Wang, Q. and Branz, H. M. and Wang, T. H. and Al-Jassim, M. M.},
abstractNote = {The atomic structure and electronic properties of crystalline silicon/hydrogenated amorphous silicon (c-Si/a-Si:H) interfaces in silicon heterojunction (SHJ) solar cells are investigated by high-resolution transmission electron microscopy, atomic-resolution Z-contrast imaging, and electron energy loss spectroscopy. We find that all high-performance SHJ solar cells exhibit atomically abrupt and flat c-Si/a-Si:H interfaces and high disorder of the a-Si:H layers. These atomically abrupt and flat c-Si/a-Si:H interfaces can be realized by direct deposition of a-Si:H on c-Si substrates at a substrate temperature below 150 deg C by hot-wire chemical vapor deposition from pure silane.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 01 00:00:00 EST 2005},
month = {Tue Nov 01 00:00:00 EST 2005}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: