skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Babar Silicon Vertex Tracker: Status and Prospects

Abstract

The BABAR Silicon Vertex Tracker (SVT) has been efficiently operated for six years since the start of data taking in 1999. Due to higher than expected background levels some unforeseen effects have appeared. We discuss: a shift in the pedestal for the channels of the AToM readout chips that are most exposed to radiation; an anomalous increase in the bias leakage current for the modules in the outer layers. Estimates of future radiation doses and occupancies are shown together with the extrapolated detector performance and lifetime, in light of the new observations.

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; more »; ; « less
Publication Date:
Research Org.:
Stanford Linear Accelerator Center (SLAC)
Sponsoring Org.:
USDOE
OSTI Identifier:
881786
Report Number(s):
SLAC-PUB-11634
TRN: US200614%%29
DOE Contract Number:  
AC02-76SF00515
Resource Type:
Conference
Resource Relation:
Conference: Contributed to VERTEX 2005, Chuzenji Lake, Nikko, Japan, 7-11 Nov 2005
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; SI SEMICONDUCTOR DETECTORS; PEP STORAGE RINGS; LEAKAGE CURRENT; PERFORMANCE; RADIATION DOSES; SERVICE LIFE; Instrumentation,INST

Citation Formats

Re, V., Bondioli, M., Bruinsma, M., Curry, S., Kirkby, D., Berryhill, J., Burke, S., Callahan, D., Campagnari, C., Cunha, A., Dahmes, B., Hale, D., Kyre, S., Richman, J., Stoner, J., Verkerke, W., Beck, T., Eisner, A.M., Kroseberg, J., Lockman, W.S., Nesom, G., and /INFN, Pavia /Pavia U. /UC, Irvine /UC, Santa Barbara /UC, Santa Cruz /INFN, Ferrara /Ferrara U. /LBL, Berkeley /Maryland U. /INFN, Milan /Milan U. /NIKHEF, Amsterdam /INFN, Pisa /Pisa U. /Princeton U. /UC, Riverside /SLAC /INFN, Turin /Turin U. /INFN, Trieste /Trieste U. Babar Silicon Vertex Tracker: Status and Prospects. United States: N. p., 2006. Web.
Re, V., Bondioli, M., Bruinsma, M., Curry, S., Kirkby, D., Berryhill, J., Burke, S., Callahan, D., Campagnari, C., Cunha, A., Dahmes, B., Hale, D., Kyre, S., Richman, J., Stoner, J., Verkerke, W., Beck, T., Eisner, A.M., Kroseberg, J., Lockman, W.S., Nesom, G., & /INFN, Pavia /Pavia U. /UC, Irvine /UC, Santa Barbara /UC, Santa Cruz /INFN, Ferrara /Ferrara U. /LBL, Berkeley /Maryland U. /INFN, Milan /Milan U. /NIKHEF, Amsterdam /INFN, Pisa /Pisa U. /Princeton U. /UC, Riverside /SLAC /INFN, Turin /Turin U. /INFN, Trieste /Trieste U. Babar Silicon Vertex Tracker: Status and Prospects. United States.
Re, V., Bondioli, M., Bruinsma, M., Curry, S., Kirkby, D., Berryhill, J., Burke, S., Callahan, D., Campagnari, C., Cunha, A., Dahmes, B., Hale, D., Kyre, S., Richman, J., Stoner, J., Verkerke, W., Beck, T., Eisner, A.M., Kroseberg, J., Lockman, W.S., Nesom, G., and /INFN, Pavia /Pavia U. /UC, Irvine /UC, Santa Barbara /UC, Santa Cruz /INFN, Ferrara /Ferrara U. /LBL, Berkeley /Maryland U. /INFN, Milan /Milan U. /NIKHEF, Amsterdam /INFN, Pisa /Pisa U. /Princeton U. /UC, Riverside /SLAC /INFN, Turin /Turin U. /INFN, Trieste /Trieste U. Thu . "Babar Silicon Vertex Tracker: Status and Prospects". United States. doi:. https://www.osti.gov/servlets/purl/881786.
@article{osti_881786,
title = {Babar Silicon Vertex Tracker: Status and Prospects},
author = {Re, V. and Bondioli, M. and Bruinsma, M. and Curry, S. and Kirkby, D. and Berryhill, J. and Burke, S. and Callahan, D. and Campagnari, C. and Cunha, A. and Dahmes, B. and Hale, D. and Kyre, S. and Richman, J. and Stoner, J. and Verkerke, W. and Beck, T. and Eisner, A.M. and Kroseberg, J. and Lockman, W.S. and Nesom, G. and /INFN, Pavia /Pavia U. /UC, Irvine /UC, Santa Barbara /UC, Santa Cruz /INFN, Ferrara /Ferrara U. /LBL, Berkeley /Maryland U. /INFN, Milan /Milan U. /NIKHEF, Amsterdam /INFN, Pisa /Pisa U. /Princeton U. /UC, Riverside /SLAC /INFN, Turin /Turin U. /INFN, Trieste /Trieste U.},
abstractNote = {The BABAR Silicon Vertex Tracker (SVT) has been efficiently operated for six years since the start of data taking in 1999. Due to higher than expected background levels some unforeseen effects have appeared. We discuss: a shift in the pedestal for the channels of the AToM readout chips that are most exposed to radiation; an anomalous increase in the bias leakage current for the modules in the outer layers. Estimates of future radiation doses and occupancies are shown together with the extrapolated detector performance and lifetime, in light of the new observations.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Apr 27 00:00:00 EDT 2006},
month = {Thu Apr 27 00:00:00 EDT 2006}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: