Magnetic Transparent Conducting Oxide Film And Method Of Making

Patent · 14 March 2006

OSTI ID:880474

Exarhos, Gregory J ^[1]; Sharma, Shiv K ^[2]

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1. Richland, WA
2. Honolulu, HI

Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 O·cm have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at 450° C. in air. An increase in film resistivity was found upon substitution of other cations (e.g., Zn2+, Al3+) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/Vis and Raman spectroscopy indicated that NiCo2O4 is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry. When x<0.67, NiO forms leading to an increase in resistivity; when x>0.67, the oxide was all spinel but the increased Co content lowered the conductivity.

• Research Organization: Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
• DOE Contract Number: AC06-76RL01830
• Assignee: Battelle Memorial Institute (Richland, WA)
• Patent Number(s): US 7,011,732
• Application Number: 10/854546
• OSTI ID: 880474
• Country of Publication: United States
• Language: English