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Title: Efg Crystal Growth Apparatus And Method

Abstract

An improved mechanical arrangement controls the introduction of silicon particles into an EFG (Edge-defined Film-fed Growth) crucible/die unit for melt replenishment during a crystal growth run. A feeder unit injects silicon particles upwardly through a center hub of the crucible/die unit and the mechanical arrangement intercepts the injected particles and directs them so that they drop into the melt in a selected region of the crucible and at velocity which reduces splashing, whereby to reduce the likelihood of interruption of the growth process due to formation of a solid mass of silicon on the center hub and adjoining components. The invention also comprises use of a Faraday ring to alter the ratio of the electrical currents flowing through primary and secondary induction heating coils that heat the crucible die unit and the mechanical arrangement.

Inventors:
 [1];  [2]
  1. (Concord, MA)
  2. (Nashua, NH)
Publication Date:
OSTI Identifier:
880419
Patent Number(s):
US 6562132
Application Number:
10/826073
Assignee:
ASE Americas, Inc. (Billerica, MA) OSTI
DOE Contract Number:  
ZAX-8-17647-10
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Mackintosh, Brian H., and Ouellette, Marc. Efg Crystal Growth Apparatus And Method. United States: N. p., 2003. Web.
Mackintosh, Brian H., & Ouellette, Marc. Efg Crystal Growth Apparatus And Method. United States.
Mackintosh, Brian H., and Ouellette, Marc. Tue . "Efg Crystal Growth Apparatus And Method". United States. https://www.osti.gov/servlets/purl/880419.
@article{osti_880419,
title = {Efg Crystal Growth Apparatus And Method},
author = {Mackintosh, Brian H. and Ouellette, Marc},
abstractNote = {An improved mechanical arrangement controls the introduction of silicon particles into an EFG (Edge-defined Film-fed Growth) crucible/die unit for melt replenishment during a crystal growth run. A feeder unit injects silicon particles upwardly through a center hub of the crucible/die unit and the mechanical arrangement intercepts the injected particles and directs them so that they drop into the melt in a selected region of the crucible and at velocity which reduces splashing, whereby to reduce the likelihood of interruption of the growth process due to formation of a solid mass of silicon on the center hub and adjoining components. The invention also comprises use of a Faraday ring to alter the ratio of the electrical currents flowing through primary and secondary induction heating coils that heat the crucible die unit and the mechanical arrangement.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {5}
}

Patent:

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