Ultrathin Dielectric Oxide Films On Silicon

Patent · 21 September 2004

OSTI ID:879962

Klemperer, Walter G ^[1]; Lee, Jason ^[2]; Mikalsen, Erik A ^[3]; Payne, David A ^[1]

---

1. Champaign, IL
2. Liverpool, GB
3. Urbana, IL

A method of making a semiconductor structure includes contacting a surface of a semiconductor with a liquid including Zr.sub.4 (OPr.sup.n).sub.16 to form a modified surface, activating the modified surface, and repeating the contacting and activating to form a layer of zirconia on the semiconductor surface.

• Research Organization: University of Ilinois
• DOE Contract Number: FG02-91ER45439
• Assignee: Board of Trustees of the University of Illinois (Urbana, IL)
• Patent Number(s): US 6,794,315
• Application Number: 10/384186
• OSTI ID: 879962
• Country of Publication: United States
• Language: English