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Epitaxial CoSi2 on MOS devices

Patent ·
OSTI ID:879855
 [1];  [2];  [3];  [3]
  1. Urbana, IL
  2. Daejeon, KR
  3. Champaign, IL
+ Show Author Affiliations
An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.
Research Organization:
University of Ilinois
DOE Contract Number:
FG02-91ER45439
Assignee:
The Board of Trustees of the University of Illinois (Urbana, IL)
Patent Number(s):
US 6,846,359
Application Number:
10/280668
OSTI ID:
879855
Country of Publication:
United States
Language:
English

References (4)

Growth behavior and thermal stability of epitaxial CoSi2 layer from cobalt–carbon films on (100) Si substrate journal September 1999
On the formation of epitaxial CoSi 2 from the reaction of Si with a Co/Ti bilayer journal January 1995
CoSi2 formation in the presence of interfacial silicon oxide journal May 1999
Epitaxial CoSi2 by solid phase reaction of Co/Ti and Co/Hf bilayers on Si(001) journal March 2001

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