Etching Of Semiconductor Wafer Edges

Patent · Tue Dec 09 00:00:00 EST 2003

OSTI ID:879579

Kardauskas, Michael J ^[1]; Piwczyk, Bernhard P ^[2]

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1. Billerica, MA
2. Dunbarton, NH

A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.

• DOE Contract Number: NREL-ZAF-6-14271-13
• Assignee: RWE Schott Solar, Inc. (Billerica, MA)
• Patent Number(s): US 6660643
• Application Number: 09/261616
• OSTI ID: 879579
• Country of Publication: United States
• Language: English