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Title: Etching Of Semiconductor Wafer Edges

Abstract

A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.

Inventors:
 [1];  [2]
  1. (Billerica, MA)
  2. (Dunbarton, NH)
Publication Date:
OSTI Identifier:
879579
Patent Number(s):
US 6660643
Application Number:
09/261616
Assignee:
RWE Schott Solar, Inc. (Billerica, MA) OSTI
DOE Contract Number:
NREL-ZAF-6-14271-13
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Kardauskas, Michael J., and Piwczyk, Bernhard P. Etching Of Semiconductor Wafer Edges. United States: N. p., 2003. Web.
Kardauskas, Michael J., & Piwczyk, Bernhard P. Etching Of Semiconductor Wafer Edges. United States.
Kardauskas, Michael J., and Piwczyk, Bernhard P. Tue . "Etching Of Semiconductor Wafer Edges". United States. doi:. https://www.osti.gov/servlets/purl/879579.
@article{osti_879579,
title = {Etching Of Semiconductor Wafer Edges},
author = {Kardauskas, Michael J. and Piwczyk, Bernhard P.},
abstractNote = {A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Dec 09 00:00:00 EST 2003},
month = {Tue Dec 09 00:00:00 EST 2003}
}

Patent:

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  • In wafer-level packaging of microelectromechanical (MEMS) devices a lid wafer is bonded to a MEMS wafer in a predermined aligned relationship. Portions of the lid wafer are removed to separate the lid wafer into lid portions that respectively correspond in alignment with MEMS devices on the MEMS wafer, and to expose areas of the MEMS wafer that respectively contain sets of bond pads respectively coupled to the MEMS devices.
  • Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shapedmore » plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.« less
  • Apparatus for measuring thicknesses of semiconductor wafers is discussed, comprising: housing means for supporting a wafer in a light-tight environment; a light source mounted to the housing at one side of the wafer to emit light of a predetermined wavelength to normally impinge the wafer; a light detector supported at a predetermined distance from a side of the wafer opposite the side on which a light source impinges and adapted to receive light transmitted through the wafer; and means for measuring the transmitted light. 4 figs.
  • A method is disclosed for photolithographically defining device features up to the resolution limit of an auto-focusing projection stepper when the device features are to be formed in a wafer cavity at a depth exceeding the depth of focus of the stepper. The method uses a focusing cavity located in a die field at the position of a focusing light beam from the auto-focusing projection stepper, with the focusing cavity being of the same depth as one or more adjacent cavities wherein a semiconductor device is to be formed. The focusing cavity provides a bottom surface for referencing the focusingmore » light beam and focusing the stepper at a predetermined depth below the surface of the wafer, whereat the device features are to be defined. As material layers are deposited in each device cavity to build up a semiconductor structure such as a microelectromechanical system (MEMS) device, the same material layers are deposited in the focusing cavity, raising the bottom surface and re-focusing the stepper for accurately defining additional device features in each succeeding material layer. The method is especially applicable for forming MEMS devices within a cavity or trench and integrating the MEMS devices with electronic circuitry fabricated on the wafer surface. 15 figs.« less
  • Apparatus for measuring thicknesses of semiconductor wafers, comprising: housing means for supporting a wafer in a light-tight environment; a light source mounted to the housing at one side of the wafer to emit light of a predetermined wavelength to normally impinge the wafer; a light detector supported at a predetermined distance from a side of the wafer opposite the side on which a light source impinges and adapted to receive light transmitted through the wafer; and means for measuring the transmitted light.