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Title: Producing Solar Cells By Surface Preparation For Accelerated Nucleation Of Microcrystalline Silicon On Heterogeneous Substrates.

Abstract

Attractive multi-junction solar cells and single junction solar cells with excellent conversion efficiency can be produced with a microcrystalline tunnel junction, microcrystalline recombination junction or one or more microcrystalline doped layers by special plasma deposition processes which includes plasma etching with only hydrogen or other specified etchants to enhance microcrystalline growth followed by microcrystalline. nucleation with a doped hydrogen-diluted feedstock.

Inventors:
 [1];  [2]
  1. Plainsboro, NJ
  2. Langhorne, PA
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
OSTI Identifier:
879359
Patent Number(s):
US 5,730,808
Application Number:
08/672110
Assignee:
Amoco/Enron Solar (Newtown, PA)
DOE Contract Number:  
ZM-0-19033-1
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Yang, Liyou, and Chen, Liangfan. Producing Solar Cells By Surface Preparation For Accelerated Nucleation Of Microcrystalline Silicon On Heterogeneous Substrates.. United States: N. p., 1998. Web.
Yang, Liyou, & Chen, Liangfan. Producing Solar Cells By Surface Preparation For Accelerated Nucleation Of Microcrystalline Silicon On Heterogeneous Substrates.. United States.
Yang, Liyou, and Chen, Liangfan. Tue . "Producing Solar Cells By Surface Preparation For Accelerated Nucleation Of Microcrystalline Silicon On Heterogeneous Substrates.". United States. https://www.osti.gov/servlets/purl/879359.
@article{osti_879359,
title = {Producing Solar Cells By Surface Preparation For Accelerated Nucleation Of Microcrystalline Silicon On Heterogeneous Substrates.},
author = {Yang, Liyou and Chen, Liangfan},
abstractNote = {Attractive multi-junction solar cells and single junction solar cells with excellent conversion efficiency can be produced with a microcrystalline tunnel junction, microcrystalline recombination junction or one or more microcrystalline doped layers by special plasma deposition processes which includes plasma etching with only hydrogen or other specified etchants to enhance microcrystalline growth followed by microcrystalline. nucleation with a doped hydrogen-diluted feedstock.},
doi = {},
url = {https://www.osti.gov/biblio/879359}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {3}
}

Patent:

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