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Title: Method For Plasma Source Ion Implantation And Deposition For Cylindrical Surfaces

Abstract

Uniform ion implantation and deposition onto cylindrical surfaces is achieved by placing a cylindrical electrode in coaxial and conformal relation to the target surface. For implantation and deposition of an inner bore surface the electrode is placed inside the target. For implantation and deposition on an outer cylindrical surface the electrode is placed around the outside of the target. A plasma is generated between the electrode and the target cylindrical surface. Applying a pulse of high voltage to the target causes ions from the plasma to be driven onto the cylindrical target surface. The plasma contained in the space between the target and the electrode is uniform, resulting in a uniform implantation or deposition of the target surface. Since the plasma is largely contained in the space between the target and the electrode, contamination of the vacuum chamber enclosing the target and electrodes by inadvertent ion deposition is reduced. The coaxial alignment of the target and the electrode may be employed for the ion assisted deposition of sputtered metals onto the target, resulting in a uniform coating of the cylindrical target surface by the sputtered material. The independently generated and contained plasmas associated with each cylindrical target/electrode pair allows formore » effective batch processing of multiple cylindrical targets within a single vacuum chamber, resulting in both uniform implantation or deposition, and reduced contamination of one target by adjacent target/electrode pairs.« less

Inventors:
 [1]
  1. (Madison, WI), Shamim, Muhammad M. (Madison, WI), Conrad, John R. (Madison, WI)
Publication Date:
OSTI Identifier:
879294
Patent Number(s):
US 5693376
Application Number:
08/494192
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
DOE Contract Number:  
9-XC3-8362E-1
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Fetherston, Robert P. Method For Plasma Source Ion Implantation And Deposition For Cylindrical Surfaces. United States: N. p., 1997. Web.
Fetherston, Robert P. Method For Plasma Source Ion Implantation And Deposition For Cylindrical Surfaces. United States.
Fetherston, Robert P. 1997. "Method For Plasma Source Ion Implantation And Deposition For Cylindrical Surfaces". United States. https://www.osti.gov/servlets/purl/879294.
@article{osti_879294,
title = {Method For Plasma Source Ion Implantation And Deposition For Cylindrical Surfaces},
author = {Fetherston, Robert P.},
abstractNote = {Uniform ion implantation and deposition onto cylindrical surfaces is achieved by placing a cylindrical electrode in coaxial and conformal relation to the target surface. For implantation and deposition of an inner bore surface the electrode is placed inside the target. For implantation and deposition on an outer cylindrical surface the electrode is placed around the outside of the target. A plasma is generated between the electrode and the target cylindrical surface. Applying a pulse of high voltage to the target causes ions from the plasma to be driven onto the cylindrical target surface. The plasma contained in the space between the target and the electrode is uniform, resulting in a uniform implantation or deposition of the target surface. Since the plasma is largely contained in the space between the target and the electrode, contamination of the vacuum chamber enclosing the target and electrodes by inadvertent ion deposition is reduced. The coaxial alignment of the target and the electrode may be employed for the ion assisted deposition of sputtered metals onto the target, resulting in a uniform coating of the cylindrical target surface by the sputtered material. The independently generated and contained plasmas associated with each cylindrical target/electrode pair allows for effective batch processing of multiple cylindrical targets within a single vacuum chamber, resulting in both uniform implantation or deposition, and reduced contamination of one target by adjacent target/electrode pairs.},
doi = {},
url = {https://www.osti.gov/biblio/879294}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {12}
}

Works referenced in this record:

Plasma source ion‐implantation technique for surface modification of materials
journal, December 1987


Ion beam enhanced deposition of titanium-nitride on INCONEL 718
journal, May 1991


Production of Diamond-Like Carbon Films by Plasma Source Ion Implantation
journal, January 1992


A new low-energy ion implanter for bombardment of cylindrical surfaces
journal, December 1985


Carbon ion implantation of pure iron
journal, April 1992


Structure and properties of amorphous diamond-like carbon films produced by ion beam assisted plasma deposition
journal, December 1993


Overview of plasma source ion implantation research at University of Wisconsin–Madison
journal, March 1994