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Title: Aluminum Nitride-Silicon Carbide Alloy Crystals Grown on SiC Substrates by Sublimation

Abstract

AlN-SiC alloy crystals, with a thickness greater than 500 m, were grown on 4H- and 6H-SiC substrates from a mixture of AlN and SiC powders by the sublimation-recondensation method at 1860-1990 C. On-axis SiC substrates produced a rough surface covered with hexagonal grains, while 6H- and 4H- off-axis SiC substrates with different miscut angles (8? or 3.68?) formed a relatively smooth surface with terraces and steps. The substrate misorientation ensured that the AlN-SiC alloy crystals grew two dimensionally as identified by scanning electron microscopy (SEM). X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed that the AlN-SiC alloys had the wurtzite structure. Electron probe microanalysis (EPMA) and x-ray photoelectron spectroscopy (XPS) demonstrated that the resultant alloy crystals had non-stoichiometric ratios of Al:N and Si:C and a uniform composition throughout the alloy crystal from the interface to the surface. The composition ratio of Al:Si of the alloy crystals changed with the growth temperature, and differed from the original source composition, which was consistent with the results predicted by thermodynamic calculation of the solid-vapor distribution of each element. XPS detected the bonding between Si-C, Si-N, Si-O for the Si 2p spectra. The dislocation density decreased with the growth, which was lower thanmore » 106 cm-2 at the alloy surface, more than two orders of magnitude lower compared to regions close to the crystal/substrate interface, as determined by TEM.« less

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Org.:
USDOE
OSTI Identifier:
878275
Report Number(s):
PNNL-SA-47567
9609; KP1303000; TRN: US200611%%9
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Resource Relation:
Journal Name: MRS Internet Journal of Nitride Semiconductor Research; Journal Volume: 10; Journal Issue: 5
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; SILICON CARBIDES; CRYSTAL GROWTH; SUBLIMATION; DISLOCATIONS; SUBSTRATES; THERMODYNAMICS; A2; Growth from vapor; B1; Alloys; B2; Semiconducting materials; Environmental Molecular Sciences Laboratory

Citation Formats

Gu, Zheng, Du, L, Edgar, James H., Payzant, Edward A., Walker, L. R., Liu, R., and Engelhard, Mark H. Aluminum Nitride-Silicon Carbide Alloy Crystals Grown on SiC Substrates by Sublimation. United States: N. p., 2005. Web.
Gu, Zheng, Du, L, Edgar, James H., Payzant, Edward A., Walker, L. R., Liu, R., & Engelhard, Mark H. Aluminum Nitride-Silicon Carbide Alloy Crystals Grown on SiC Substrates by Sublimation. United States.
Gu, Zheng, Du, L, Edgar, James H., Payzant, Edward A., Walker, L. R., Liu, R., and Engelhard, Mark H. Tue . "Aluminum Nitride-Silicon Carbide Alloy Crystals Grown on SiC Substrates by Sublimation". United States. doi:.
@article{osti_878275,
title = {Aluminum Nitride-Silicon Carbide Alloy Crystals Grown on SiC Substrates by Sublimation},
author = {Gu, Zheng and Du, L and Edgar, James H. and Payzant, Edward A. and Walker, L. R. and Liu, R. and Engelhard, Mark H.},
abstractNote = {AlN-SiC alloy crystals, with a thickness greater than 500 m, were grown on 4H- and 6H-SiC substrates from a mixture of AlN and SiC powders by the sublimation-recondensation method at 1860-1990 C. On-axis SiC substrates produced a rough surface covered with hexagonal grains, while 6H- and 4H- off-axis SiC substrates with different miscut angles (8? or 3.68?) formed a relatively smooth surface with terraces and steps. The substrate misorientation ensured that the AlN-SiC alloy crystals grew two dimensionally as identified by scanning electron microscopy (SEM). X-ray diffraction (XRD) and transmission electron microscopy (TEM) confirmed that the AlN-SiC alloys had the wurtzite structure. Electron probe microanalysis (EPMA) and x-ray photoelectron spectroscopy (XPS) demonstrated that the resultant alloy crystals had non-stoichiometric ratios of Al:N and Si:C and a uniform composition throughout the alloy crystal from the interface to the surface. The composition ratio of Al:Si of the alloy crystals changed with the growth temperature, and differed from the original source composition, which was consistent with the results predicted by thermodynamic calculation of the solid-vapor distribution of each element. XPS detected the bonding between Si-C, Si-N, Si-O for the Si 2p spectra. The dislocation density decreased with the growth, which was lower than 106 cm-2 at the alloy surface, more than two orders of magnitude lower compared to regions close to the crystal/substrate interface, as determined by TEM.},
doi = {},
journal = {MRS Internet Journal of Nitride Semiconductor Research},
number = 5,
volume = 10,
place = {United States},
year = {Tue Dec 20 00:00:00 EST 2005},
month = {Tue Dec 20 00:00:00 EST 2005}
}