High average power pockels cell

Patent · 01 January 1991

OSTI ID:875261

Daly, Thomas P. ^[1]

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1. Pleasanton, CA

A high average power pockels cell is disclosed which reduces the effect of thermally induced strains in high average power laser technology. The pockels cell includes an elongated, substantially rectangular crystalline structure formed from a KDP-type material to eliminate shear strains. The X- and Y-axes are oriented substantially perpendicular to the edges of the crystal cross-section and to the C-axis direction of propagation to eliminate shear strains.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: W-7405-ENG-48
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): H000868
• Application Number: 06/827703
• OSTI ID: 875261
• Country of Publication: United States
• Language: English

Related Subjects

/359/372/
average
average power
c-axis
cell
cross-section
crystal
crystalline
crystalline structure
direction
disclosed
edges
effect
eliminate
elongated
formed
induced
induced strains
kdp-type
laser
laser technology
line structure
material
oriented
oriented substantially
p-type material
perpendicular
pockels
pockels cell
power
power laser
power pockels
propagation
rectangular
reduces
shear
statutory invention registration
strains
structure
structure formed
substantially
substantially perpendicular
substantially rectangular
technology
thermally
thermally induced
type material
x-
y-axes