Gold-based electrical interconnections for microelectronic devices

Patent · Tue Jan 01 00:00:00 EST 2002

OSTI ID:874971

Peterson, Kenneth A ^[1]; Garrett, Stephen E ^[1]; Reber, Cathleen A ^[2]; Watson, Robert D ^[3]

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1. Albuquerque, NM
2. Corrales, NM
3. Tijeras, NM

A method of making an electrical interconnection from a microelectronic device to a package, comprising ball or wedge compression bonding a gold-based conductor directly to a silicon surface, such as a polysilicon bonding pad in a MEMS or IMEMS device, without using layers of aluminum or titanium disposed in-between the conductor and the silicon surface. After compression bonding, optional heating of the bond above 363 C. allows formation of a liquid gold-silicon eutectic phase containing approximately 3% (by weight) silicon, which significantly improves the bond strength by reforming and enhancing the initial compression bond. The same process can be used for improving the bond strength of Au--Ge bonds by forming a liquid Au-12Ge eutectic phase.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• DOE Contract Number: AC04-94AL85000
• Assignee: Sandia Corporation (Albuquerque, NM)
• Patent Number(s): US 6500760
• OSTI ID: 874971
• Country of Publication: United States
• Language: English

Related Subjects

gold-based
electrical
interconnections
microelectronic
devices
method
interconnection
device
package
comprising
ball
wedge
compression
bonding
conductor
directly
silicon
surface
polysilicon
pad
mems
imems
layers
aluminum
titanium
disposed
in-between
optional
heating
bond
363
allows
formation
liquid
gold-silicon
eutectic
phase
containing
approximately
weight
significantly
improves
strength
reforming
enhancing
initial
process
improving
au-ge
bonds
forming
au-12ge
mems device
electrical interconnection
electronic device
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