Gold-based electrical interconnections for microelectronic devices

Patent · 01 January 2002

OSTI ID:874971

Peterson, Kenneth A ^[1]; Garrett, Stephen E ^[1]; Reber, Cathleen A ^[2]; Watson, Robert D ^[3]

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1. Albuquerque, NM
2. Corrales, NM
3. Tijeras, NM

A method of making an electrical interconnection from a microelectronic device to a package, comprising ball or wedge compression bonding a gold-based conductor directly to a silicon surface, such as a polysilicon bonding pad in a MEMS or IMEMS device, without using layers of aluminum or titanium disposed in-between the conductor and the silicon surface. After compression bonding, optional heating of the bond above 363 C. allows formation of a liquid gold-silicon eutectic phase containing approximately 3% (by weight) silicon, which significantly improves the bond strength by reforming and enhancing the initial compression bond. The same process can be used for improving the bond strength of Au--Ge bonds by forming a liquid Au-12Ge eutectic phase.

• Research Organization: SANDIA CORP
• DOE Contract Number: AC04-94AL85000
• Assignee: Sandia Corporation (Albuquerque, NM)
• Patent Number(s): US 6500760
• OSTI ID: 874971
• Country of Publication: United States
• Language: English

Related Subjects

/438/
363
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approximately
au--ge
au-12ge
ball
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compression
comprising
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containing
device
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directly
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electrical interconnection
electronic device
enhancing
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formation
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gold-based
gold-silicon
heating
imems
improves
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in-between
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liquid
mems
mems device
method
microelectronic
optional
package
pad
phase
polysilicon
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reforming
significantly
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titanium
wedge
weight