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Electrostatically focused addressable field emission array chips (AFEA's) for high-speed massively parallel maskless digital E-beam direct write lithography and scanning electron microscopy

Patent ·
OSTI ID:874963
 [1];  [2];  [3];  [1];  [1];  [1];  [3];  [4];  [3]
  1. Knoxville, TN
  2. Farragut, TN
  3. Oak Ridge, TN
  4. Clinton, TN
+ Show Author Affiliations

Systems and methods are described for addressable field emission array (AFEA) chips. A method of operating an addressable field-emission array, includes: generating a plurality of electron beams from a pluralitly of emitters that compose the addressable field-emission array; and focusing at least one of the plurality of electron beams with an on-chip electrostatic focusing stack. The systems and methods provide advantages including the avoidance of space-charge blow-up.

Research Organization:
Lockheed Martin Energy Research Corporation
Assignee:
UT-Battelle (Oakridge, TN)
Patent Number(s):
US 6498349
Application Number:
09/368,919
OSTI ID:
874963
Country of Publication:
United States
Language:
English

References (8)

Electron-beam microcolumns for lithography and related applications journal November 1996
A review of ion projection lithography journal May 1998
EL5: One tool for advanced x-ray and chrome on glass mask making journal November 1998
Extreme ultraviolet lithography journal November 1998
X-ray lithography for ≤100 nm ground rules in complex patterns journal November 1997
Arrayed miniature electron beam columns for high throughput sub-100 nm lithography journal November 1992
Miniaturized e-beam writer: Testing of components journal February 1995
Scattering with angular limitation projection electron beam lithography for suboptical lithography journal November 1997

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Related Subjects

/250/
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