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Method for making MgO buffer layers on rolled nickel or copper as superconductor substrates

Patent ·
OSTI ID:874823
Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.
Research Organization:
LOCKHEED MARTIN ENERGY RES COR
DOE Contract Number:
AC05-96OR22464
Assignee:
UT-Battelle, LLC ()
Patent Number(s):
US 6468591
OSTI ID:
874823
Country of Publication:
United States
Language:
English

References (5)

Epitaxial Formation and Characterization of CeO2 Films journal January 1994
Significant improvement of superconductivity of laser ablated “YBa2Cu3O7/MgO” thin films: introduction of a SrTiO3 buffer layer journal June 1995
High current YBa 2 Cu 3 O 7−δ thick films on flexible nickel substrates with textured buffer layers journal October 1994
Growth of biaxially textured buffer layers on rolled-Ni substrates by electron beam evaporation journal February 1997
MgO epitaxial thin films on (100) GaAs as a substrate for the growth of oriented PbTiO 3 journal June 1992