Electrostatic particle trap for ion beam sputter deposition

Patent · 01 January 2002

OSTI ID:874733

Vernon, Stephen P ^[1]; Burkhart, Scott C ^[2]

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1. Pleasanton, CA
2. Livermore, CA

A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA
• DOE Contract Number: W-7405-ENG-48
• Assignee: The Regents of the University of California (Oakland, CA)
• Patent Number(s): US 6451176
• OSTI ID: 874733
• Country of Publication: United States
• Language: English

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