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Title: Method of fabricating reflection-mode EUV diffraction elements

Abstract

Techniques for fabricating a well-controlled, quantized-level, engineered surface that serves as substrates for EUV reflection multilayer overcomes problems associated with the fabrication of reflective EUV diffraction elements. The technique when employed to fabricate an EUV diffraction element that includes the steps of: (a) forming an etch stack comprising alternating layers of first and second materials on a substrate surface where the two material can provide relative etch selectivity; (b) creating a relief profile in the etch stack wherein the relief profile has a defined contour; and (c) depositing a multilayer reflection film over the relief profile wherein the film has an outer contour that substantially matches that of the relief profile. For a typical EUV multilayer, if the features on the substrate are larger than 50 nm, the multilayer will be conformal to the substrate. Thus, the phase imparted to the reflected wavefront will closely match that geometrically set by the surface height profile.

Inventors:
 [1]
  1. (Oakland, CA)
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
OSTI Identifier:
874451
Patent Number(s):
US 6392792
Assignee:
The Regents of the University of California (Oakland, CA) LBNL
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; fabricating; reflection-mode; euv; diffraction; elements; techniques; well-controlled; quantized-level; engineered; surface; serves; substrates; reflection; multilayer; overcomes; associated; fabrication; reflective; technique; employed; fabricate; element; steps; forming; etch; stack; comprising; alternating; layers; materials; substrate; material; provide; selectivity; creating; relief; profile; defined; contour; depositing; film; outer; substantially; matches; typical; features; larger; 50; nm; conformal; phase; imparted; reflected; wavefront; closely; match; geometrically; set; height; substrate surface; alternating layers; /359/216/

Citation Formats

Naulleau, Patrick P. Method of fabricating reflection-mode EUV diffraction elements. United States: N. p., 2002. Web.
Naulleau, Patrick P. Method of fabricating reflection-mode EUV diffraction elements. United States.
Naulleau, Patrick P. Tue . "Method of fabricating reflection-mode EUV diffraction elements". United States. https://www.osti.gov/servlets/purl/874451.
@article{osti_874451,
title = {Method of fabricating reflection-mode EUV diffraction elements},
author = {Naulleau, Patrick P.},
abstractNote = {Techniques for fabricating a well-controlled, quantized-level, engineered surface that serves as substrates for EUV reflection multilayer overcomes problems associated with the fabrication of reflective EUV diffraction elements. The technique when employed to fabricate an EUV diffraction element that includes the steps of: (a) forming an etch stack comprising alternating layers of first and second materials on a substrate surface where the two material can provide relative etch selectivity; (b) creating a relief profile in the etch stack wherein the relief profile has a defined contour; and (c) depositing a multilayer reflection film over the relief profile wherein the film has an outer contour that substantially matches that of the relief profile. For a typical EUV multilayer, if the features on the substrate are larger than 50 nm, the multilayer will be conformal to the substrate. Thus, the phase imparted to the reflected wavefront will closely match that geometrically set by the surface height profile.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 2002},
month = {Tue Jan 01 00:00:00 EST 2002}
}

Patent:

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