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Title: Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication

Abstract

Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

Inventors:
 [1]
  1. Baltimore, MD
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
874390
Patent Number(s):
US 6380627
Assignee:
The Regents of the University of California (Oakland, CA)
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
resistance; barrier; layer; isolating; adhering; passivating; copper; metal; semiconductor; fabrication; cubic; metastable; refractory; carbides; layers; isolate; adhere; passivate; carbide; deposited; conjunction; metallizations; form; multilayer; characterized; crystal; structure; strong; 100; texture; materials; transition; vanadium; vc; niobium; nbc; tantalum; tac; chromium; crsub3; csub2; tungsten; wc; molybdenum; moc; transition metal; semiconductor fabrication; metal carbide; /257/

Citation Formats

Weihs, Timothy P, and Barbee, Jr., Troy W. Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication. United States: N. p., 2002. Web.
Weihs, Timothy P, & Barbee, Jr., Troy W. Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication. United States.
Weihs, Timothy P, and Barbee, Jr., Troy W. Tue . "Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication". United States. https://www.osti.gov/servlets/purl/874390.
@article{osti_874390,
title = {Low resistance barrier layer for isolating, adhering, and passivating copper metal in semiconductor fabrication},
author = {Weihs, Timothy P and Barbee, Jr., Troy W.},
abstractNote = {Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

Patent:

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