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Title: Junction-based field emission structure for field emission display

Abstract

A junction-based field emission display, wherein the junctions are formed by depositing a semiconducting or dielectric, low work function, negative electron affinity (NEA) silicon-based compound film (SBCF) onto a metal or n-type semiconductor substrate. The SBCF can be doped to become a p-type semiconductor. A small forward bias voltage is applied across the junction so that electron transport is from the substrate into the SBCF region. Upon entering into this NEA region, many electrons are released into the vacuum level above the SBCF surface and accelerated toward a positively biased phosphor screen anode, hence lighting up the phosphor screen for display. To turn off, simply switch off the applied potential across the SBCF/substrate. May be used for field emission flat panel displays.

Inventors:
 [1];  [2];  [3];  [4]
  1. (Concord, CA)
  2. (Berkeley, CA)
  3. (Oakland, CA)
  4. (Livermore, CA)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
874254
Patent Number(s):
US 6351254
Assignee:
The Regents of the University of California () LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
junction-based; field; emission; structure; display; junctions; formed; depositing; semiconducting; dielectric; function; negative; electron; affinity; nea; silicon-based; compound; film; sbcf; metal; n-type; semiconductor; substrate; doped; p-type; forward; bias; voltage; applied; junction; transport; region; entering; electrons; released; vacuum; level; surface; accelerated; positively; biased; phosphor; screen; anode; hence; lighting; simply; switch; potential; sbcfsubstrate; flat; panel; displays; field emission; compound film; electron affinity; negative electron; emission display; /345/313/315/

Citation Formats

Dinh, Long N., Balooch, Mehdi, McLean, II, William, and Schildbach, Marcus A. Junction-based field emission structure for field emission display. United States: N. p., 2002. Web.
Dinh, Long N., Balooch, Mehdi, McLean, II, William, & Schildbach, Marcus A. Junction-based field emission structure for field emission display. United States.
Dinh, Long N., Balooch, Mehdi, McLean, II, William, and Schildbach, Marcus A. Tue . "Junction-based field emission structure for field emission display". United States. https://www.osti.gov/servlets/purl/874254.
@article{osti_874254,
title = {Junction-based field emission structure for field emission display},
author = {Dinh, Long N. and Balooch, Mehdi and McLean, II, William and Schildbach, Marcus A.},
abstractNote = {A junction-based field emission display, wherein the junctions are formed by depositing a semiconducting or dielectric, low work function, negative electron affinity (NEA) silicon-based compound film (SBCF) onto a metal or n-type semiconductor substrate. The SBCF can be doped to become a p-type semiconductor. A small forward bias voltage is applied across the junction so that electron transport is from the substrate into the SBCF region. Upon entering into this NEA region, many electrons are released into the vacuum level above the SBCF surface and accelerated toward a positively biased phosphor screen anode, hence lighting up the phosphor screen for display. To turn off, simply switch off the applied potential across the SBCF/substrate. May be used for field emission flat panel displays.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

Patent:

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