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Title: Junction-based field emission structure for field emission display

Abstract

A junction-based field emission display, wherein the junctions are formed by depositing a semiconducting or dielectric, low work function, negative electron affinity (NEA) silicon-based compound film (SBCF) onto a metal or n-type semiconductor substrate. The SBCF can be doped to become a p-type semiconductor. A small forward bias voltage is applied across the junction so that electron transport is from the substrate into the SBCF region. Upon entering into this NEA region, many electrons are released into the vacuum level above the SBCF surface and accelerated toward a positively biased phosphor screen anode, hence lighting up the phosphor screen for display. To turn off, simply switch off the applied potential across the SBCF/substrate. May be used for field emission flat panel displays.

Inventors:
 [1];  [2];  [3];  [4]
  1. (Concord, CA)
  2. (Berkeley, CA)
  3. (Oakland, CA)
  4. (Livermore, CA)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
874254
Patent Number(s):
US 6351254
Assignee:
The Regents of the University of California () LLNL
DOE Contract Number:
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
junction-based; field; emission; structure; display; junctions; formed; depositing; semiconducting; dielectric; function; negative; electron; affinity; nea; silicon-based; compound; film; sbcf; metal; n-type; semiconductor; substrate; doped; p-type; forward; bias; voltage; applied; junction; transport; region; entering; electrons; released; vacuum; level; surface; accelerated; positively; biased; phosphor; screen; anode; hence; lighting; simply; switch; potential; sbcfsubstrate; flat; panel; displays; field emission; compound film; electron affinity; negative electron; emission display; /345/313/315/

Citation Formats

Dinh, Long N., Balooch, Mehdi, McLean, II, William, and Schildbach, Marcus A. Junction-based field emission structure for field emission display. United States: N. p., 2002. Web.
Dinh, Long N., Balooch, Mehdi, McLean, II, William, & Schildbach, Marcus A. Junction-based field emission structure for field emission display. United States.
Dinh, Long N., Balooch, Mehdi, McLean, II, William, and Schildbach, Marcus A. 2002. "Junction-based field emission structure for field emission display". United States. doi:. https://www.osti.gov/servlets/purl/874254.
@article{osti_874254,
title = {Junction-based field emission structure for field emission display},
author = {Dinh, Long N. and Balooch, Mehdi and McLean, II, William and Schildbach, Marcus A.},
abstractNote = {A junction-based field emission display, wherein the junctions are formed by depositing a semiconducting or dielectric, low work function, negative electron affinity (NEA) silicon-based compound film (SBCF) onto a metal or n-type semiconductor substrate. The SBCF can be doped to become a p-type semiconductor. A small forward bias voltage is applied across the junction so that electron transport is from the substrate into the SBCF region. Upon entering into this NEA region, many electrons are released into the vacuum level above the SBCF surface and accelerated toward a positively biased phosphor screen anode, hence lighting up the phosphor screen for display. To turn off, simply switch off the applied potential across the SBCF/substrate. May be used for field emission flat panel displays.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2002,
month = 1
}

Patent:

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  • A triode carbon nanotube field emission display (FED) using a barrier rib structure and a manufacturing method thereof are provided. In a triode carbon nanotube FED employing barrier ribs, barrier ribs are formed on cathode lines by a screen printing method, a mesh structure is mounted on the barrier ribs, and a spacer is inserted between the barrier ribs through slots of the mesh structure, thereby stably fixing the mesh structure and the spacer within a FED panel due to support by the barrier ribs.
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  • A multi-layer resistive carbon film field emitter device for cold cathode field emission applications. The multi-layered film of the present invention consists of at least two layers of a conductive carbon material, preferably amorphous-tetrahedrally coordinated carbon, where the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure can be a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film can be a plurality of carbon layers, where adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbonmore » species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced.« less