Crystal growth and annealing for minimized residual stress
Patent
·
OSTI ID:874249
- Albuquerque, NM
A method and apparatus for producing crystals that minimizes birefringence even at large crystal sizes, and is suitable for production of CaF.sub.2 crystals. The method of the present invention comprises annealing a crystal by maintaining a minimal temperature gradient in the crystal while slowly reducing the bulk temperature of the crystal. An apparatus according to the present invention includes a thermal control system added to a crystal growth and annealing apparatus, wherein the thermal control system allows a temperature gradient during crystal growth but minimizes the temperature gradient during crystal annealing.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- US 6350310
- OSTI ID:
- 874249
- Country of Publication:
- United States
- Language:
- English
Lithography with 157 nm lasers
|
journal | November 1997 |
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