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Title: Optical method for the determination of grain orientation in films

Patent ·
OSTI ID:874121
 [1]
  1. Barrington, RI
+ Show Author Affiliations

A method for the determination of grain orientation in a film sample is provided comprising the steps of measuring a first transient optical response of the film and determining the contribution to the transient optical response arising from a change in the energy distribution of the electrons in the sample, determining the contribution to the transient optical response arising from a propagating strain pulse within the sample, and determining the contribution to the transient optical response arising from a change in sample temperature of the sample. The grain orientation of the sample may be determined using the contributions to the transient optical response arising from the change in the energy distribution of the electrons, the propagating strain pulse, and the change in sample temperature. Additionally, a method for determination of the thickness of a film sample is provided. The grain orientation of the sample is first determined. The grain orientation, together with the velocity of sound and a propagation time of a strain pulse through the sample are then used to determine the thickness of the film sample.

Research Organization:
Brown Univ., Providence, RI (United States)
DOE Contract Number:
FG02-86ER45267
Assignee:
Brown University Research Foundation (Providence, RI)
Patent Number(s):
US 6317216
OSTI ID:
874121
Country of Publication:
United States
Language:
English

References (11)

Picosecond spectroscopy of semiconductors journal January 1978
Physics of ultrafast phenomena in solid state plasmas journal January 1978
Analysis of lattice defects induced by ion implantation with photo‐acoustic displacement measurements journal November 1994
Ion implant monitoring with thermal wave technology journal September 1985
Detection of thermal waves through optical reflectance journal June 1985
Picosecond Ellipsometry of Transient Electron-Hole Plasmas in Germanium journal May 1974
Measurements of the Kapitza conductance between diamond and several metals journal March 1992
Thermal and plasma wave depth profiling in silicon journal September 1985
Thin‐film thickness measurements with thermal waves journal July 1983
Kapitza conductance and heat flow between solids at temperatures from 50 to 300 K journal December 1993
A New Method of Photothermal Displacement Measurement by Laser Interferometric Probe -Its Mechanism and Applications to Evaluation of Lattice Damage in Semiconductors journal November 1992

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Related Subjects

optical
method
determination
grain
orientation
films
film
sample
provided
comprising
steps
measuring
transient
response
determining
contribution
arising
change
energy
distribution
electrons
propagating
strain
pulse
temperature
determined
contributions
additionally
thickness
velocity
sound
propagation
time
determine
energy distribution
optical method
grain orientation
film sample
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