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Title: Method for depositing layers of high quality semiconductor material

Abstract

Plasma deposition of substantially amorphous semiconductor materials is carried out under a set of deposition parameters which are selected so that the process operates near the amorphous/microcrystalline threshold. This threshold varies as a function of the thickness of the depositing semiconductor layer; and, deposition parameters, such as diluent gas concentrations, must be adjusted as a function of layer thickness. Also, this threshold varies as a function of the composition of the depositing layer, and in those instances where the layer composition is profiled throughout its thickness, deposition parameters must be adjusted accordingly so as to maintain the amorphous/microcrystalline threshold.

Inventors:
 [1];  [1]
  1. Troy, MI
Publication Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
OSTI Identifier:
873931
Patent Number(s):
US 6274461
Application Number:
09/377,652
Assignee:
United Solar Systems Corporation (Troy, MI)
DOE Contract Number:  
ZAK-8-17619-09
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; depositing; layers; quality; semiconductor; material; plasma; deposition; substantially; amorphous; materials; carried; set; parameters; selected; process; operates; near; microcrystalline; threshold; varies; function; thickness; layer; diluent; gas; concentrations; adjusted; composition; instances; profiled; throughout; accordingly; maintain; deposition parameters; semiconductor materials; semiconductor material; semiconductor layer; gas concentration; plasma deposition; amorphous semiconductor; layer thickness; process operates; substantially amorphous; quality semiconductor; gas concentrations; layer composition; diluent gas; depositing layers; /438/

Citation Formats

Guha, Subhendu, and Yang, Chi C. Method for depositing layers of high quality semiconductor material. United States: N. p., 2001. Web.
Guha, Subhendu, & Yang, Chi C. Method for depositing layers of high quality semiconductor material. United States.
Guha, Subhendu, and Yang, Chi C. 2001. "Method for depositing layers of high quality semiconductor material". United States. https://www.osti.gov/servlets/purl/873931.
@article{osti_873931,
title = {Method for depositing layers of high quality semiconductor material},
author = {Guha, Subhendu and Yang, Chi C},
abstractNote = {Plasma deposition of substantially amorphous semiconductor materials is carried out under a set of deposition parameters which are selected so that the process operates near the amorphous/microcrystalline threshold. This threshold varies as a function of the thickness of the depositing semiconductor layer; and, deposition parameters, such as diluent gas concentrations, must be adjusted as a function of layer thickness. Also, this threshold varies as a function of the composition of the depositing layer, and in those instances where the layer composition is profiled throughout its thickness, deposition parameters must be adjusted accordingly so as to maintain the amorphous/microcrystalline threshold.},
doi = {},
url = {https://www.osti.gov/biblio/873931}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}

Works referenced in this record:

Effect of hydrogen dilution on the structure of amorphous silicon alloys
journal, September 1997