Operation and biasing for single device equivalent to CMOS
- 10328 Pinehurst Ave., Omaha, NE 68124
Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of field induced carriers. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents. Operation of the gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems under typical bias schemes is described, and simple demonstrative five mask fabrication procedures for the inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.
- Research Organization:
- Welch, James D. (10328 Pinehurst Ave., Omaha, NE 68124)
- DOE Contract Number:
- FG47-93R701314
- Assignee:
- Welch, James D. (10328 Pinehurst Ave., Omaha, NE 68124)
- Patent Number(s):
- US 6268636
- OSTI ID:
- 873902
- Country of Publication:
- United States
- Language:
- English
Etched Schottky-barrier m.o.s.f.e.t.s using a single mask
|
journal | January 1971 |
Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer
|
journal | December 1976 |
Metallurgical and electrical properties of chromium silicon interfaces
|
journal | January 1980 |
Compound formation between amorphous silicon and chromium
|
journal | December 1980 |
SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain
|
journal | January 1968 |
Similar Records
Semiconductor systems utilizing materials that form rectifying junctions in both n and p-type doping regions, whether metallurgically or field induced, and methods of use
Semiconductor systems utilizing materials that form rectifying junctions in both N and P-type doping regions, whether metallurgically or field induced, and methods of use
Related Subjects
biasing
single
device
equivalent
cmos
disclosed
semiconductor
devices
including
junction
rectifying
caused
p-type
presence
field
induced
carriers
particular
inverting
non-inverting
gate
voltage
channel
operating
characteristics
similar
conventional
multiple
systems
operated
modulators
non-latching
approach
blocking
parasitic
currents
typical
bias
schemes
described
simple
demonstrative
five
mask
fabrication
procedures
semiconductor single
parasitic current
multiple device
single device
characteristics similar
operating characteristics
semiconductor device
semiconductor devices
gate voltage
single devices
devices including
parasitic currents
field induced
fabrication procedures
mask fabrication
fabrication procedure
operating characteristic
device equivalent
/257/