InGaAsN/GaAs heterojunction for multi-junction solar cells
Patent
·
OSTI ID:873812
- Albuquerque, NM
- Edgewood, NM
An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 070%.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- US 6252287
- OSTI ID:
- 873812
- Country of Publication:
- United States
- Language:
- English
Similar Records
AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor
Device characteristics of the PnP AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistor
InGaAsN/AlGaAs Pnp Heterojunction Bipolar Transistor
Journal Article
·
Tue Jan 04 00:00:00 EST 2000
·
OSTI ID:873812
+4 more
Device characteristics of the PnP AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistor
Conference
·
Wed Feb 09 00:00:00 EST 2000
·
OSTI ID:873812
+3 more
InGaAsN/AlGaAs Pnp Heterojunction Bipolar Transistor
Journal Article
·
Wed Nov 03 00:00:00 EST 1999
· Applied Physics Letters
·
OSTI ID:873812
+4 more
Related Subjects
ingaasn
gaas
heterojunction
multi-junction
solar
cells
semiconductor
p-n
disclosed
forming
95-1
bandgap
photodetector
application
high-efficiency
formed
epitaxially
growing
gallium
arsenide
germanium
substrate
n-type
indium
nitride
layer
alloy
composition
1-x
1-y
ltoreq
04
p-type
layers
lattice-matched
grown
molecular
beam
epitaxy
metalorganic
chemical
vapor
deposition
mocvd
provides
open-circuit
voltage
62
volts
internal
quantum
efficiency
70
indium gallium
alloy composition
circuit voltage
chemical vapor
solar cell
solar cells
vapor deposition
molecular beam
semiconductor alloy
quantum efficiency
gallium arsenide
beam epitaxy
gaas layer
multi-junction solar
metalorganic chemical
junction solar
epitaxially grown
organic chemical
epitaxially growing
/257/136/
gaas
heterojunction
multi-junction
solar
cells
semiconductor
p-n
disclosed
forming
95-1
bandgap
photodetector
application
high-efficiency
formed
epitaxially
growing
gallium
arsenide
germanium
substrate
n-type
indium
nitride
layer
alloy
composition
1-x
1-y
ltoreq
04
p-type
layers
lattice-matched
grown
molecular
beam
epitaxy
metalorganic
chemical
vapor
deposition
mocvd
provides
open-circuit
voltage
62
volts
internal
quantum
efficiency
70
indium gallium
alloy composition
circuit voltage
chemical vapor
solar cell
solar cells
vapor deposition
molecular beam
semiconductor alloy
quantum efficiency
gallium arsenide
beam epitaxy
gaas layer
multi-junction solar
metalorganic chemical
junction solar
epitaxially grown
organic chemical
epitaxially growing
/257/136/