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All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof

Patent ·
OSTI ID:873809
 [1]
  1. Elkton, MD
+ Show Author Affiliations

An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.

Research Organization:
University of Delaware
Assignee:
United States of America as represented by United States Department (Washington, DC)
Patent Number(s):
US 6251701
Application Number:
09/516,686
OSTI ID:
873809
Country of Publication:
United States
Language:
English

References (1)

A treatment to allow contacting CdTe with different conductors [solar cells]
  • McCandless, B. E.; Qu, Y.; Birkmire, R. W.
  • Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) https://doi.org/10.1109/WCPEC.1994.519819
conference January 1994

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/438/136/
all-vapor
annealed
cells
compound
comprising
conductivity
contacts
copper
depositing
dry
dry method
enhanced
enhancing
grain
grain size
heat-annealing
ii-vi
ii-vi semiconductor
layer
method
modifying
ohmic
ohmic contact
ohmic contacts
p-type
p-type tellurium
p-type tellurium-containing
processing
produce
producing
provided
provided comprising
semiconductor
size
solar
solar cell
solar cells
surface
tellurium
tellurium compound
tellurium-containing
tellurium-containing ii-vi