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Title: Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process

Abstract

The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.

Inventors:
 [1];  [2];  [3];  [4];  [4]
  1. Lafayette, CO
  2. Arvada, CO
  3. Boulder, CO
  4. Golden, CO
Publication Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
OSTI Identifier:
873807
Patent Number(s):
US 6251183
Assignee:
Midwest Research Institute (Kansas City, MO)
DOE Contract Number:  
AC36-98GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
rapid; low-temperature; epitaxial; growth; hot-element; assisted; chemical; vapor; deposition; process; provides; depositing; layer; crystalline; substrate; comprising; steps; providing; chamber; element; capable; heating; introducing; temperature; sufficient; decompose; source; gas; passing; contact; forming; assisted chemical; chemical vapor; vapor deposition; temperature sufficient; deposition process; epitaxial layer; epitaxial growth; source gas; crystalline substrate; element capable; /117/

Citation Formats

Iwancizko, Eugene, Jones, Kim M, Crandall, Richard S, Nelson, Brent P, and Mahan, Archie Harvin. Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process. United States: N. p., 2001. Web.
Iwancizko, Eugene, Jones, Kim M, Crandall, Richard S, Nelson, Brent P, & Mahan, Archie Harvin. Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process. United States.
Iwancizko, Eugene, Jones, Kim M, Crandall, Richard S, Nelson, Brent P, and Mahan, Archie Harvin. Mon . "Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process". United States. https://www.osti.gov/servlets/purl/873807.
@article{osti_873807,
title = {Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process},
author = {Iwancizko, Eugene and Jones, Kim M and Crandall, Richard S and Nelson, Brent P and Mahan, Archie Harvin},
abstractNote = {The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

Patent:

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