Stable surface passivation process for compound semiconductors
- Edgewood, NM
A passivation process for a previously sulfided, selenided or tellurated III-V compound semiconductor surface. The concentration of undesired mid-gap surface states on a compound semiconductor surface is reduced by the formation of a near-monolayer of metal-(sulfur and/or selenium and/or tellurium)-semiconductor that is effective for long term passivation of the underlying semiconductor surface. Starting with the III-V compound semiconductor surface, any oxidation present thereon is substantially removed and the surface is then treated with sulfur, selenium or tellurium to form a near-monolayer of chalcogen-semiconductor of the surface in an oxygen-free atmosphere. This chalcogenated surface is then contacted with a solution of a metal that will form a low solubility chalcogenide to form a near-monolayer of metal-chalcogen-semiconductor. The resulting passivating layer provides long term protection for the underlying surface at or above the level achieved by a freshly chalcogenated compound semiconductor surface in an oxygen free atmosphere.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- US 6228672
- OSTI ID:
- 873712
- Country of Publication:
- United States
- Language:
- English
Similar Records
Direct approaches to zinc polychalcogenide chemistry: ZnS sub 6 (N-MeIm) sub 2 and ZnSe sub 4 (N-MeIm) sub 2
Nanoparticles Formed from Bacterial Oxyanion Reduction of Toxic Group 15 and Group 16 Metalloids
Related Subjects
surface
passivation
process
compound
semiconductors
previously
sulfided
selenided
tellurated
iii-v
semiconductor
concentration
undesired
mid-gap
reduced
formation
near-monolayer
metal-
sulfur
selenium
tellurium
-semiconductor
effective
term
underlying
starting
oxidation
thereon
substantially
removed
treated
form
chalcogen-semiconductor
oxygen-free
atmosphere
chalcogenated
contacted
solution
metal
solubility
chalcogenide
metal-chalcogen-semiconductor
resulting
passivating
layer
provides
protection
level
achieved
freshly
oxygen
free
surface passivation
underlying semiconductor
compound semiconductors
iii-v compound
substantially remove
semiconductor surface
compound semiconductor
layer provides
oxygen-free atmosphere
passivating layer
passivation process
oxygen free
stable surface
table surface
free atmosphere
surface pass
/438/257/