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Title: Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices

Abstract

A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

Inventors:
 [1];  [2]
  1. (Martinez, CA)
  2. (Lake Oswego, OR)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
873578
Patent Number(s):
US 6193870
Assignee:
Regents of University of California (Oakland, CA) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
hard; mask; formation; gate; dielectric; via; nanofilament; field; emission; devices; process; fabricating; device; layer; self-aligned; metal; structure; located; top; inert; etch; chemistry; formed; pattern; etched; nuclear; tracks; trackable; material; eliminate; erosion; protect; edge; desired; method; provides; tolerance; electroplating; sharpening; dielectric layer; metal layer; field emission; method provides; gate metal; method provide; structure located; nuclear tracks; nanofilament field; hard mask; mask layer; emission device; emission devices; trackable material; /205/445/

Citation Formats

Morse, Jeffrey D., and Contolini, Robert J. Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices. United States: N. p., 2001. Web.
Morse, Jeffrey D., & Contolini, Robert J. Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices. United States.
Morse, Jeffrey D., and Contolini, Robert J. Mon . "Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices". United States. https://www.osti.gov/servlets/purl/873578.
@article{osti_873578,
title = {Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices},
author = {Morse, Jeffrey D. and Contolini, Robert J.},
abstractNote = {A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

Patent:

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