Method of casting patterned dielectric structures

Patent · Mon Jan 01 00:00:00 EST 2001

OSTI ID:873471

Poco, John F ^[1]; Hrubesh, Lawrence W ^[1]

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1. Livermore, CA

A pattern of dielectric structures are formed directly on a substrate in a single step using sol-gel chemistry and molding procedures. The resulting dielectric structures are useful in vacuum applications for electronic devices. Porous, lightweight structures having a high aspect ratio that are suitable for use as spacers between the faceplate and baseplate of a field emission display can be manufactured using this method.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• DOE Contract Number: W-7405-ENG-48
• Assignee: Regents of University of California (Oakland, CA)
• Patent Number(s): US 6168737
• OSTI ID: 873471
• Country of Publication: United States
• Language: English

Related Subjects

method
casting
patterned
dielectric
structures
pattern
formed
directly
substrate
single
step
sol-gel
chemistry
molding
procedures
resulting
useful
vacuum
applications
electronic
devices
porous
lightweight
aspect
ratio
suitable
spacers
faceplate
baseplate
field
emission
display
manufactured
formed directly
dielectric structure
single step
aspect ratio
field emission
electronic devices
sol-gel chemistry
electronic device
dielectric structures
vacuum applications
emission display
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