Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate

Patent · Sat Jan 01 00:00:00 EST 2000

OSTI ID:873354

McKee, Rodney A ^[1]; Walker, Frederick J ^[2]; Chisholm, Matthew F ^[2]

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1. Kingston, TN
2. Oak Ridge, TN

A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• DOE Contract Number: AC05-96OR22464
• Assignee: UT-Battelle, LLC (Oak Ridge, TN)
• Patent Number(s): US 6143072
• OSTI ID: 873354
• Country of Publication: United States
• Language: English

Related Subjects

generic
process
preparing
crystalline
oxide
semiconductor
substrate
growing
epitaxially
surface
structure
constructed
described
germanium
silicon
represented
formula
ao
non-negative
integer
repeats
planes
alkaline
earth
oxides
earth-containing
perovskite
atomic
level
control
interfacial
thermodynamics
multicomponent
highly
perfect
interface
obtained
crystalline oxide
level control
earth oxides
earth oxide
semiconductor substrate
alkaline earth
perovskite oxides
oxide epitaxially
perovskite oxide
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