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Title: Method of forming a stress relieved amorphous tetrahedrally-coordinated carbon film

Patent ·
OSTI ID:873158
 [1];  [2]
  1. Albuquerque, NM
  2. Placitas, NM
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A stress-relieved amorphous-diamond film is formed by depositing an amorphous diamond film with specific atomic structure and bonding on to a substrate, and annealing the film at sufficiently high temperature to relieve the compressive stress in said film without significantly softening said film. The maximum annealing temperature is preferably on the order of 650.degree. C., a much lower value than is expected from the annealing behavior of other materials.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 6103305
OSTI ID:
873158
Country of Publication:
United States
Language:
English

References (2)

Thick stress-free amorphous-tetrahedral carbon films with hardness near that of diamond journal December 1997
Deposition of hydrogen‐free diamond‐like carbon film by plasma enhanced chemical vapor deposition journal June 1996

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method
forming
stress
relieved
amorphous
tetrahedrally-coordinated
carbon
film
stress-relieved
amorphous-diamond
formed
depositing
diamond
specific
atomic
structure
bonding
substrate
annealing
sufficiently
temperature
relieve
compressive
significantly
softening
maximum
preferably
650
degree
value
expected
behavior
materials
amorphous diamond
carbon film
diamond film
compressive stress
annealing temperature
specific atomic
relieved amorphous
coordinated carbon
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