Formation of microchannels from low-temperature plasma-deposited silicon oxynitride

Patent · Sat Jan 01 00:00:00 EST 2000

OSTI ID:873127

Matzke, Carolyn M ^[1]; Ashby, Carol I. H. ^[2]; Bridges, Monica M ^[3]; Manginell, Ronald P ^[3]

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1. Los Lunas, NM
2. Edgewood, NM
3. Albuquerque, NM

A process for forming one or more fluid microchannels on a substrate is disclosed that is compatible with the formation of integrated circuitry on the substrate. The microchannels can be formed below an upper surface of the substrate, above the upper surface, or both. The microchannels are formed by depositing a covering layer of silicon oxynitride over a mold formed of a sacrificial material such as photoresist which can later be removed. The silicon oxynitride is deposited at a low temperature (.ltoreq.100.degree. C.) and preferably near room temperature using a high-density plasma (e.g. an electron-cyclotron resonance plasma or an inductively-coupled plasma). In some embodiments of the present invention, the microchannels can be completely lined with silicon oxynitride to present a uniform material composition to a fluid therein. The present invention has applications for forming microchannels for use in chromatography and electrophoresis. Additionally, the microchannels can be used for electrokinetic pumping, or for localized or global substrate cooling.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• DOE Contract Number: AC04-94AL85000
• Assignee: Sandia Corporation (Albuquerque, NM)
• Patent Number(s): US 6096656
• OSTI ID: 873127
• Country of Publication: United States
• Language: English

Related Subjects

formation
microchannels
low-temperature
plasma-deposited
silicon
oxynitride
process
forming
fluid
substrate
disclosed
compatible
integrated
circuitry
formed
below
upper
surface
depositing
covering
layer
mold
sacrificial
material
photoresist
removed
deposited
temperature
ltoreq
100
degree
preferably
near
high-density
plasma
electron-cyclotron
resonance
inductively-coupled
embodiments
completely
lined
uniform
composition
therein
applications
chromatography
electrophoresis
additionally
electrokinetic
pumping
localized
global
cooling
sacrificial material
high-density plasma
electrokinetic pump
material composition
density plasma
upper surface
integrated circuit
cyclotron resonance
coupled plasma
silicon oxynitride
electrokinetic pumping
temperature plasma
formed below
integrated circuitry
/438/205/216/